Performance of a high resolution chemically amplified electron beam resist at various beam energies

Richard Palmer, Dongxu Yang, Andreas Frommhold, A. McClelland, J. Roth, M. Rosamond, E.H. Linfield, J. Osmond, Alexander Robinson

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)
122 Downloads (Pure)

Abstract

A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.
Original languageEnglish
Pages (from-to)97-101
JournalMicroelectronic Engineering
Volume155
Early online date5 Mar 2016
DOIs
Publication statusPublished - 2 Apr 2016

Keywords

  • Electron beam lithography
  • Molecular resist
  • Chemically amplification
  • Electron beam energy

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