Performance of a high resolution chemically amplified electron beam resist at various beam energies

Richard Palmer; Dongxu Yang; Andreas Frommhold; A. McClelland; J. Roth; M. Rosamond; E.H. Linfield; J.  Osmond; Alexander Robinson

doi:10.1016/j.mee.2016.03.010

Performance of a high resolution chemically amplified electron beam resist at various beam energies

Richard Palmer, Dongxu Yang, Andreas Frommhold, A. McClelland, J. Roth, M. Rosamond, E.H. Linfield, J. Osmond, Alexander Robinson

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

197 Downloads (Pure)

Abstract

A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.

Original language	English
Pages (from-to)	97-101
Journal	Microelectronic Engineering
Volume	155
Early online date	5 Mar 2016
DOIs	https://doi.org/10.1016/j.mee.2016.03.010
Publication status	Published - 2 Apr 2016

Keywords

Electron beam lithography
Molecular resist
Chemically amplification
Electron beam energy

Access to Document

10.1016/j.mee.2016.03.010Licence: Creative Commons: Attribution (CC BY)

Yang_et_al_Performance_high_resolution_Microelectronic_EngineeringFinal published version, 1.17 MBLicence: Creative Commons: Attribution (CC BY)

Impact Acceleration Account - UOB 2012
Tickell, A. (Principal Investigator)
Engineering & Physical Science Research Council
1/10/12 → 31/03/17
Project: Research Councils
Materials Program Platform Grant : Nanostructured Surfaces
Palmer, R. (Principal Investigator), Guo, Q. (Co-Investigator), Li, Z. (Co-Investigator), Kaplan, A. (Co-Investigator) & Robinson, A. (Co-Investigator)
Engineering & Physical Science Research Council
1/07/07 → 31/12/11
Project: Research Councils

Cite this

@article{207fa4fa826b407eadb22c2b3d6c8d8c,

title = "Performance of a high resolution chemically amplified electron beam resist at various beam energies",

abstract = "A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.",

keywords = "Electron beam lithography, Molecular resist, Chemically amplification, Electron beam energy",

author = "Richard Palmer and Dongxu Yang and Andreas Frommhold and A. McClelland and J. Roth and M. Rosamond and E.H. Linfield and J. Osmond and Alexander Robinson",

year = "2016",

month = apr,

day = "2",

doi = "10.1016/j.mee.2016.03.010",

language = "English",

volume = "155",

pages = "97--101",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - Performance of a high resolution chemically amplified electron beam resist at various beam energies

AU - Palmer, Richard

AU - Yang, Dongxu

AU - Frommhold, Andreas

AU - McClelland, A.

AU - Roth, J.

AU - Rosamond, M.

AU - Linfield, E.H.

AU - Osmond, J.

AU - Robinson, Alexander

PY - 2016/4/2

Y1 - 2016/4/2

N2 - A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.

AB - A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.

KW - Electron beam lithography

KW - Molecular resist

KW - Chemically amplification

KW - Electron beam energy

U2 - 10.1016/j.mee.2016.03.010

DO - 10.1016/j.mee.2016.03.010

M3 - Article

SN - 0167-9317

VL - 155

SP - 97

EP - 101

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Performance of a high resolution chemically amplified electron beam resist at various beam energies

Abstract

Keywords

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Projects

Impact Acceleration Account - UOB 2012

Materials Program Platform Grant : Nanostructured Surfaces

Cite this