The dielectric properties of some ceramic substrate materials at terahertz frequencies

Research output: Contribution to journalArticlepeer-review


  • Mingsheng Ma
  • Feng Liu
  • Faqiang Zhang
  • Zhifu Liu
  • Yongxiang Li
  • Zhang-cheng Hao

External organisations

  • Chinese Academy of Sciences
  • RMIT University
  • Southeast University


The terahertz (THz) dielectric constant (ε r ') and dielectric loss tangent (tanδ) of the commercial LTCC materials (Ferro A6M and DuPont 951), Al 2O 3 (ceramic and single crystal), AlN and β-Si 3N 4 ceramics were measured using a vector network analyzer (VNA) over the frequency range of 140–220 GHz and a time-domain spectrometer (TDS) from 0.2 to 1.0 THz. The results from the two instruments are compared with the literature and show good agreement and consistency. For Ferro A6M, ε r ' = 6.06, tanδ = 0.012 at 1.0 THz. For DuPont 951, ε r ' = 7.67, tanδ = 0.097 at 1.0 THz. For Al 2O 3 ceramic and single crystal, the measured THz dielectric properties are consistent with the reported works. The dielectric constant of AlN (ε r ' = 8.85) and β-Si 3N 4r ' = 8.41) ceramics in the THz region is a little lower than those reported for the MHz to GHz region. These results provide valuable and much needed reference information for device designers and material scientists.


Original languageEnglish
Pages (from-to)4424-4428
Number of pages5
JournalJournal of the European Ceamic Society
Issue number14
Early online date6 Jun 2019
Publication statusPublished - Nov 2019


  • Ceramic substrate materials, Dielectric properties, Terahertz band