Zero-bias Schottky Diode Power Detector for D-band

Harshwardhan Kamble*, Milan Salek, Yi Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The D-band (110 - 170 GHz) waveguide-based zero-bias Schottky diode (ZBD) power detector is reported. The design aims to get high responsivity across the band. The circuit is fabricated on a 50 μm thick quartz substrate. A 3D model and spice model of a commercially available zero-bias Schottky diode are used in the design. The detector achieves the average responsivities of nearly 5000 V/W and a minimum of 1900 V/W at higher frequencies. The detector circuit is housed in a gold-plated metallic block for measurements.

Original languageEnglish
Title of host publication16th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies, UCMMT 2023 - Proceedings
PublisherIEEE
ISBN (Electronic)9798350339406
ISBN (Print)9798350339413
DOIs
Publication statusPublished - 14 Nov 2023
Event16th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies, UCMMT 2023 - Guangzhou, China
Duration: 31 Aug 20233 Sept 2023

Publication series

NameUK, Europe, China Millimeter Waves and THz Technology Workshop (UCMMT)
PublisherIEEE
ISSN (Print)2639-4545
ISSN (Electronic)2639-4537

Conference

Conference16th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies, UCMMT 2023
Country/TerritoryChina
CityGuangzhou
Period31/08/233/09/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

  • Direct detection
  • millimetre wave
  • power detector
  • responsivity
  • Schottky diode
  • waveguide to microstrip transition

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation
  • Radiation

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