Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors

Paulina Majchrzak, Klara Volckaert, Antonija Grubišić Čabo, Deepnarayan Biswas, Marco Bianchi, Sanjoy K. Mahatha, Maciej Dendzik, Federico Andreatta, Signe S. Grønborg, Igor Marković, Jonathon M. Riley, Jens C. Johannsen, Daniel Lizzit, Luca Bignardi, Silvano Lizzit, Cephise Cacho, Oliver Alexander, Dan Matselyukh, Adam S. Wyatt, Richard T. ChapmanEmma Springate, Jeppe V. Lauritsen, Phil D.C. King, Charlotte E. Sanders, Jill A. Miwa, Philip Hofmann, Søren Ulstrup*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)
34 Downloads (Pure)

Abstract

The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the single- and bilayer TMDCs MoS2 and WS2 on three different substrates: Au(111), Ag(111) and graphene/SiC. The photoexcited quasiparticle bandgaps are observed to vary over the range of 1.9–2.5 eV between our systems. The transient conduction band signals decay on a sub-50 fs timescale on the metals, signifying an efficient removal of photoinduced carriers into the bulk metallic states. On graphene, we instead observe a fast timescale on the order of 170 fs, followed by a slow dynamics for the conduction band decay in MoS2. These timescales are explained by Auger recombination involving MoS2 and in-gap defect states. In bilayer TMDCs on metals we observe a complex redistribution of excited holes along the valence band that is substantially affected by interactions with the continuum of bulk metallic states.

Original languageEnglish
Article number147093
Number of pages7
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume250
Early online date19 Jun 2021
DOIs
Publication statusPublished - Jul 2021

Bibliographical note

Funding Information:
We thank Phil Rice and Alistair Cox for technical support during the Artemis beamtimes. We gratefully acknowledge funding from VILLUM FONDEN, Denmark through the Young Investigator Program (Grant. No. 15375) and the Centre of Excellence for Dirac Materials, Denmark (Grant. No. 11744), the Danish Council for Independent Research, Natural Sciences, Denmark under the Sapere Aude program (Grant Nos. DFF-9064-00057B and DFF-6108-00409). Access to the Artemis Facility was funded by STFC. I.M. acknowledges financial support by the International Max Planck Research School for Chemistry and Physics of Quantum Materials (IMPRS-CPQM). The authors also acknowledge The Royal Society and The Leverhulme Trust.

Publisher Copyright:
© 2021 The Author(s)

Keywords

  • Bandgap renormalization
  • Time-and angle-resolved photoemission spectroscopy
  • Transition metal dichalcogenides
  • Ultrafast carrier dynamics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

Fingerprint

Dive into the research topics of 'Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors'. Together they form a unique fingerprint.

Cite this