Relaxor ferroelectric-like high effective permittivity in leaky dielectrics/oxide semiconductors induced by electrode effects: A case study of CuO ceramics

M Li; Antonio Feteira; DC Sinclair

doi:10.1063/1.3143014

Relaxor ferroelectric-like high effective permittivity in leaky dielectrics/oxide semiconductors induced by electrode effects: A case study of CuO ceramics

M Li, Antonio Feteira, DC Sinclair

Chemistry

Research output: Contribution to journal › Letter

90 Citations (Scopus)

Original language	English
Article number	114109
Journal	Journal of Applied Physics
Volume	105
Issue number	11
DOIs	https://doi.org/10.1063/1.3143014
Publication status	Published - 1 Jun 2009

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10.1063/1.3143014

Cite this

@article{98e00c6ad44145e2953ea85074e5398b,

title = "Relaxor ferroelectric-like high effective permittivity in leaky dielectrics/oxide semiconductors induced by electrode effects: A case study of CuO ceramics",

author = "M Li and Antonio Feteira and DC Sinclair",

year = "2009",

month = jun,

day = "1",

doi = "10.1063/1.3143014",

language = "English",

volume = "105",

journal = "Journal of Applied Physics",

issn = "1089-7550",

publisher = "American Institute of Physics",

number = "11",

}

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T1 - Relaxor ferroelectric-like high effective permittivity in leaky dielectrics/oxide semiconductors induced by electrode effects: A case study of CuO ceramics

AU - Li, M

AU - Feteira, Antonio

AU - Sinclair, DC

PY - 2009/6/1

Y1 - 2009/6/1

U2 - 10.1063/1.3143014

DO - 10.1063/1.3143014

M3 - Letter

SN - 1089-7550

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 114109

ER -