Radiation hardness of MALTA2 monolithic CMOS imaging sensors on Czochralski substrates

Milou van Rijnbach; Dumitru Vlad Berlea; Valerio Dao; Martin Gaži; Phil Allport; Ignacio Asensi Tortajada; Prafulla Behera; Daniela Bortoletto; Craig Buttar; Florian Dachs; Ganapati Dash; Dominik Dobrijević; Lucian Fasselt; Leyre Flores Sanz de Acedo; Andrea Gabrielli; Laura Gonella; Vicente Gonzalez; Giuliano Gustavino; Pranati Jana; Long Li; Heinz Pernegger; Francesco Piro; Petra Riedler; Heidi Sandaker; Sergio Sánchez-Carrillo; Walter Snoeys; Tomislav Suligoj; Marcos Vazquez Nunez; Anusree Vijay; Julian Weick; Steven Worm; Abdelhak M. Zoubir

doi:10.1140/epjc/s10052-024-12601-3

Radiation hardness of MALTA2 monolithic CMOS imaging sensors on Czochralski substrates

Milou van Rijnbach^*, Dumitru Vlad Berlea, Valerio Dao, Martin Gaži, Phil Allport, Ignacio Asensi Tortajada, Prafulla Behera, Daniela Bortoletto, Craig Buttar, Florian Dachs, Ganapati Dash, Dominik Dobrijević, Lucian Fasselt, Leyre Flores Sanz de Acedo, Andrea Gabrielli, Laura Gonella, Vicente Gonzalez, Giuliano Gustavino, Pranati Jana, Long LiHeinz Pernegger, Francesco Piro, Petra Riedler, Heidi Sandaker, Sergio Sánchez-Carrillo, Walter Snoeys, Tomislav Suligoj, Marcos Vazquez Nunez, Anusree Vijay, Julian Weick, Steven Worm, Abdelhak M. Zoubir

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS sensor imaging technology. In order to comply with the requirements of high energy physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce random telegraph signal (RTS) noise, and optimise the charge collection geometry. Compared to its predecessors, MALTA2 targets the use of a high-resistivity, thick Czochralski (Cz) substrates in order to demonstrate radiation hardness in terms of detection efficiency and timing resolution up to 3 × 1015 1 MeV neq/cm2 with backside metallisation to achieve good propagation of the bias voltage. This manuscript shows the results that were obtained with non-irradiated and irradiated MALTA2 samples on Cz substrates from the CERN SPS test beam campaign from 2021 to 2023 using the MALTA telescope.

Original language	English
Article number	251
Number of pages	16
Journal	European Physical Journal C
Volume	84
Issue number	3
Early online date	10 Mar 2024
DOIs	https://doi.org/10.1140/epjc/s10052-024-12601-3
Publication status	E-pub ahead of print - 10 Mar 2024

Bibliographical note

Acknowledgements
We are grateful to Grégory Grosset and his colleagues of Ion Beam Services in Peynier, France, for their support during the backside metallisation process. This project has received funding from the European Union’s Horizon 2020 Research and Innovation programme under Grant Agreement numbers 101004761 (AIDAinnova), 675587 (STREAM), and 654168 (IJS, Ljubljana, Slovenia).

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van Rijnbach, M., Berlea, D. V., Dao, V., Gaži, M., Allport, P., Tortajada, I. A., Behera, P., Bortoletto, D., Buttar, C., Dachs, F., Dash, G., Dobrijević, D., Fasselt, L., de Acedo, L. F. S., Gabrielli, A., Gonella, L., Gonzalez, V., Gustavino, G., Jana, P., ... Zoubir, A. M. (2024). Radiation hardness of MALTA2 monolithic CMOS imaging sensors on Czochralski substrates. European Physical Journal C, 84(3), Article 251. Advance online publication. https://doi.org/10.1140/epjc/s10052-024-12601-3

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title = "Radiation hardness of MALTA2 monolithic CMOS imaging sensors on Czochralski substrates",

abstract = "MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS sensor imaging technology. In order to comply with the requirements of high energy physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce random telegraph signal (RTS) noise, and optimise the charge collection geometry. Compared to its predecessors, MALTA2 targets the use of a high-resistivity, thick Czochralski (Cz) substrates in order to demonstrate radiation hardness in terms of detection efficiency and timing resolution up to 3 × 1015 1 MeV neq/cm2 with backside metallisation to achieve good propagation of the bias voltage. This manuscript shows the results that were obtained with non-irradiated and irradiated MALTA2 samples on Cz substrates from the CERN SPS test beam campaign from 2021 to 2023 using the MALTA telescope.",

author = "{van Rijnbach}, Milou and Berlea, {Dumitru Vlad} and Valerio Dao and Martin Ga{\v z}i and Phil Allport and Tortajada, {Ignacio Asensi} and Prafulla Behera and Daniela Bortoletto and Craig Buttar and Florian Dachs and Ganapati Dash and Dominik Dobrijevi{\'c} and Lucian Fasselt and {de Acedo}, {Leyre Flores Sanz} and Andrea Gabrielli and Laura Gonella and Vicente Gonzalez and Giuliano Gustavino and Pranati Jana and Long Li and Heinz Pernegger and Francesco Piro and Petra Riedler and Heidi Sandaker and Sergio S{\'a}nchez-Carrillo and Walter Snoeys and Tomislav Suligoj and Nunez, {Marcos Vazquez} and Anusree Vijay and Julian Weick and Steven Worm and Zoubir, {Abdelhak M.}",

note = "Acknowledgements We are grateful to Gr{\'e}gory Grosset and his colleagues of Ion Beam Services in Peynier, France, for their support during the backside metallisation process. This project has received funding from the European Union{\textquoteright}s Horizon 2020 Research and Innovation programme under Grant Agreement numbers 101004761 (AIDAinnova), 675587 (STREAM), and 654168 (IJS, Ljubljana, Slovenia).",

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doi = "10.1140/epjc/s10052-024-12601-3",

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van Rijnbach, M, Berlea, DV, Dao, V, Gaži, M, Allport, P, Tortajada, IA, Behera, P, Bortoletto, D, Buttar, C, Dachs, F, Dash, G, Dobrijević, D, Fasselt, L, de Acedo, LFS, Gabrielli, A, Gonella, L, Gonzalez, V, Gustavino, G, Jana, P, Li, L, Pernegger, H, Piro, F, Riedler, P, Sandaker, H, Sánchez-Carrillo, S, Snoeys, W, Suligoj, T, Nunez, MV, Vijay, A, Weick, J, Worm, S & Zoubir, AM 2024, 'Radiation hardness of MALTA2 monolithic CMOS imaging sensors on Czochralski substrates', European Physical Journal C, vol. 84, no. 3, 251. https://doi.org/10.1140/epjc/s10052-024-12601-3

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T1 - Radiation hardness of MALTA2 monolithic CMOS imaging sensors on Czochralski substrates

AU - van Rijnbach, Milou

AU - Berlea, Dumitru Vlad

AU - Dao, Valerio

AU - Gaži, Martin

AU - Allport, Phil

AU - Tortajada, Ignacio Asensi

AU - Behera, Prafulla

AU - Bortoletto, Daniela

AU - Buttar, Craig

AU - Dachs, Florian

AU - Dash, Ganapati

AU - Dobrijević, Dominik

AU - Fasselt, Lucian

AU - de Acedo, Leyre Flores Sanz

AU - Gabrielli, Andrea

AU - Gonella, Laura

AU - Gonzalez, Vicente

AU - Gustavino, Giuliano

AU - Jana, Pranati

AU - Li, Long

AU - Pernegger, Heinz

AU - Piro, Francesco

AU - Riedler, Petra

AU - Sandaker, Heidi

AU - Sánchez-Carrillo, Sergio

AU - Snoeys, Walter

AU - Suligoj, Tomislav

AU - Nunez, Marcos Vazquez

AU - Vijay, Anusree

AU - Weick, Julian

AU - Worm, Steven

AU - Zoubir, Abdelhak M.

N1 - Acknowledgements We are grateful to Grégory Grosset and his colleagues of Ion Beam Services in Peynier, France, for their support during the backside metallisation process. This project has received funding from the European Union’s Horizon 2020 Research and Innovation programme under Grant Agreement numbers 101004761 (AIDAinnova), 675587 (STREAM), and 654168 (IJS, Ljubljana, Slovenia).

PY - 2024/3/10

Y1 - 2024/3/10

N2 - MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS sensor imaging technology. In order to comply with the requirements of high energy physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce random telegraph signal (RTS) noise, and optimise the charge collection geometry. Compared to its predecessors, MALTA2 targets the use of a high-resistivity, thick Czochralski (Cz) substrates in order to demonstrate radiation hardness in terms of detection efficiency and timing resolution up to 3 × 1015 1 MeV neq/cm2 with backside metallisation to achieve good propagation of the bias voltage. This manuscript shows the results that were obtained with non-irradiated and irradiated MALTA2 samples on Cz substrates from the CERN SPS test beam campaign from 2021 to 2023 using the MALTA telescope.

AB - MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS sensor imaging technology. In order to comply with the requirements of high energy physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce random telegraph signal (RTS) noise, and optimise the charge collection geometry. Compared to its predecessors, MALTA2 targets the use of a high-resistivity, thick Czochralski (Cz) substrates in order to demonstrate radiation hardness in terms of detection efficiency and timing resolution up to 3 × 1015 1 MeV neq/cm2 with backside metallisation to achieve good propagation of the bias voltage. This manuscript shows the results that were obtained with non-irradiated and irradiated MALTA2 samples on Cz substrates from the CERN SPS test beam campaign from 2021 to 2023 using the MALTA telescope.

U2 - 10.1140/epjc/s10052-024-12601-3

DO - 10.1140/epjc/s10052-024-12601-3

M3 - Article

SN - 1434-6044

VL - 84

JO - European Physical Journal C

JF - European Physical Journal C

IS - 3

M1 - 251

ER -

Radiation hardness of MALTA2 monolithic CMOS imaging sensors on Czochralski substrates

Abstract

Bibliographical note

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