TY - JOUR
T1 - Radiation hardness of MALTA2 monolithic CMOS imaging sensors on Czochralski substrates
AU - van Rijnbach, Milou
AU - Berlea, Dumitru Vlad
AU - Dao, Valerio
AU - Gaži, Martin
AU - Allport, Phil
AU - Tortajada, Ignacio Asensi
AU - Behera, Prafulla
AU - Bortoletto, Daniela
AU - Buttar, Craig
AU - Dachs, Florian
AU - Dash, Ganapati
AU - Dobrijević, Dominik
AU - Fasselt, Lucian
AU - de Acedo, Leyre Flores Sanz
AU - Gabrielli, Andrea
AU - Gonella, Laura
AU - Gonzalez, Vicente
AU - Gustavino, Giuliano
AU - Jana, Pranati
AU - Li, Long
AU - Pernegger, Heinz
AU - Piro, Francesco
AU - Riedler, Petra
AU - Sandaker, Heidi
AU - Sánchez-Carrillo, Sergio
AU - Snoeys, Walter
AU - Suligoj, Tomislav
AU - Nunez, Marcos Vazquez
AU - Vijay, Anusree
AU - Weick, Julian
AU - Worm, Steven
AU - Zoubir, Abdelhak M.
N1 - Acknowledgements
We are grateful to Grégory Grosset and his colleagues of Ion Beam Services in Peynier, France, for their support during the backside metallisation process. This project has received funding from the European Union’s Horizon 2020 Research and Innovation programme under Grant Agreement numbers 101004761 (AIDAinnova), 675587 (STREAM), and 654168 (IJS, Ljubljana, Slovenia).
PY - 2024/3/10
Y1 - 2024/3/10
N2 - MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS sensor imaging technology. In order to comply with the requirements of high energy physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce random telegraph signal (RTS) noise, and optimise the charge collection geometry. Compared to its predecessors, MALTA2 targets the use of a high-resistivity, thick Czochralski (Cz) substrates in order to demonstrate radiation hardness in terms of detection efficiency and timing resolution up to 3 × 1015 1 MeV neq/cm2 with backside metallisation to achieve good propagation of the bias voltage. This manuscript shows the results that were obtained with non-irradiated and irradiated MALTA2 samples on Cz substrates from the CERN SPS test beam campaign from 2021 to 2023 using the MALTA telescope.
AB - MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS sensor imaging technology. In order to comply with the requirements of high energy physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce random telegraph signal (RTS) noise, and optimise the charge collection geometry. Compared to its predecessors, MALTA2 targets the use of a high-resistivity, thick Czochralski (Cz) substrates in order to demonstrate radiation hardness in terms of detection efficiency and timing resolution up to 3 × 1015 1 MeV neq/cm2 with backside metallisation to achieve good propagation of the bias voltage. This manuscript shows the results that were obtained with non-irradiated and irradiated MALTA2 samples on Cz substrates from the CERN SPS test beam campaign from 2021 to 2023 using the MALTA telescope.
U2 - 10.1140/epjc/s10052-024-12601-3
DO - 10.1140/epjc/s10052-024-12601-3
M3 - Article
SN - 1434-6044
VL - 84
JO - European Physical Journal C
JF - European Physical Journal C
IS - 3
M1 - 251
ER -