TY - JOUR
T1 - p-n diode with hole- and electron-doped lanthanum manganites
AU - Mitra, C
AU - Raychaudhuri, Pratap
AU - Kobernik, G
AU - Dorr, K
AU - Muller, KH
AU - Schultz, L
AU - Pinto, R
PY - 2001/1/1
Y1 - 2001/1/1
N2 - The hole-doped (p-) manganite La0.7Ca0.3MnO3 and the electron-doped (n-) manganite La0.7Ce0.3MnO3 undergo an insulator-to-metal transition at around 250 K, above which both behave as a polaronic semiconductor. We have fabricated an epitaxial trilayer (La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3), where SrTiO3 is an insulator. At room temperature, i.e., in the semiconducting regime, it exhibits asymmetric current-voltage (I-V) characteristics akin to a p-n diode. The observed asymmetry in the I-V characteristics disappears at low temperatures where both the manganite layers are metallic. These results indicate that using the polaronic semiconducting regime of doped manganites, a p-n diode can be constructed. (C) 2001 American Institute of Physics.
AB - The hole-doped (p-) manganite La0.7Ca0.3MnO3 and the electron-doped (n-) manganite La0.7Ce0.3MnO3 undergo an insulator-to-metal transition at around 250 K, above which both behave as a polaronic semiconductor. We have fabricated an epitaxial trilayer (La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3), where SrTiO3 is an insulator. At room temperature, i.e., in the semiconducting regime, it exhibits asymmetric current-voltage (I-V) characteristics akin to a p-n diode. The observed asymmetry in the I-V characteristics disappears at low temperatures where both the manganite layers are metallic. These results indicate that using the polaronic semiconducting regime of doped manganites, a p-n diode can be constructed. (C) 2001 American Institute of Physics.
UR - http://www.scopus.com/inward/record.url?scp=0035828592&partnerID=8YFLogxK
U2 - 10.1063/1.1409592
DO - 10.1063/1.1409592
M3 - Letter
SN - 1077-3118
VL - 79
SP - 2408
EP - 2410
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 15
ER -