Monte Carlo Simulations of High-Speed InSb-InA1Sb FETs

D Herbert, Peter Childs, A Abram, GC Crow, M Walmsley

Research output: Contribution to journalArticle

14 Citations (Scopus)


Self consistent Monte Carlo simulations which include impact ionization are used to study the high-speed potential of InSb field-effect transistors. It is found that the impact ionization has a strong influence on the performance of InSb for high speed. The ionization leads to a high electron drift velocity and substrate bias can be used to extract the holes which are generated in the,channel. Residual hole density within the channel, however, limits the maximum speed. The substrate bias and buffer doping are critical for extracting holes from the channel without inducing excess ionization. Simulations yield a peak cutoff frequency of 820 GHz with a 0.03125-mu m gate, a source to drain voltage of 0.58, and a sheet doping density of 1.7 x 10(12) cm(-2).
Original languageEnglish
Pages (from-to)1072-1078
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number6
Publication statusPublished - 1 Jun 2005


  • Monte Carlo simulation
  • low power
  • InSb
  • high-speed response
  • impact ionization


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