Abstract
Angle-resolved photoemission spectroscopy (ARPES) and X-ray photoemission spectroscopy have been used to characterise epitaxially ordered graphene grown on copper foil by low-pressure chemical vapour deposition. A short vacuum anneal to 200 °C allows observation of ordered low energy electron diffraction patterns. High quality Dirac cones are measured in ARPES with the Dirac point at the Fermi level (undoped graphene). Annealing above 300 °C produces n-type doping in the graphene with up to 350 meV shift in Fermi level, and opens a band gap of around 100 meV. Dirac cone dispersion for graphene on Cu foil after vacuum anneals (left: 200 °C, undoped; right: 500 °C, n-doped). Centre: low energy electron diffraction from graphene on Cu foil after 200 °C anneal. Data from Antares (SOLEIL).
| Original language | English |
|---|---|
| Pages (from-to) | 643-646 |
| Number of pages | 4 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 7 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - Sept 2013 |
Keywords
- Band gap
- Cu
- CVD
- Dirac cone
- Doping
- Graphene
- Nano-ARPES
- Photoemission
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics