Direct determination of band-gap renormalization in degenerately doped ultrawide band gap Β- Ga₂ O₃ semiconductor

Ga₂O₃ is emerging as a promising wide band-gap semiconductor for high-power electronics and deep ultraviolet optoelectronics. It is highly desirable to dope it with controllable carrier concentrations for different device applications. This work reports a combined photoemission spectroscopy and theoretical calculation study on the electronic structure of Si doped Ga₂O₃ films with carrier concentration varying from 4.6×10¹⁸cm^-3 to 2.6×10²⁰cm^-3. Hard x-ray photoelectron spectroscopy was used to directly measure the widening of the band gap as a result of occupation of conduction band and band-gap renormalization associated with many-body interactions. A large band-gap renormalization of 0.3 eV was directly observed in heavily doped Ga₂O₃. Supplemented with hybrid density functional theory calculations, we demonstrated that the band-gap renormalization results from the decrease in energy of the conduction band edge driven by the mutual electrostatic interaction between added electrons. Moreover, our work reveals that Si is a superior dopant over Ge and Sn, because Si3s forms a resonant donor state above the conduction band minimum, leaving the host conduction band mostly unperturbed and a high mobility is maintained though the doping level is high. Insights of the present work have significant implications in doping optimization of Ga₂O₃ and realization of optoelectronic devices.