Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide

Jiaye Zhang; Joe Willis; Zhenni Yang; Xu Lian; Wei Chen; Lai-Sen Wang; Xiangyu Xu; Tien Lin Lee; Lang Chen; David O. Scanlon; Kelvin H.L. Zhang

doi:10.1016/j.xcrp.2022.100801

Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide

Jiaye Zhang, Joe Willis, Zhenni Yang, Xu Lian, Wei Chen, Lai-Sen Wang, Xiangyu Xu, Tien Lin Lee, Lang Chen^*, David O. Scanlon^*, Kelvin H.L. Zhang^*

^*Corresponding author for this work

Chemistry

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Abstract

Deep UV transparent thin films have recently attracted considerable attention owing to their potential in UV and organic-based optoelectronics. Here, we report the achievement of a deep UV transparent and highly conductive thin film based on Si-doped Ga₂O₃ (SGO) with high conductivity of 2500 S/cm. The SGO thin films exhibit high transparency over a wide spectrum ranging from visible light to deep UV wavelength and, meanwhile, have a very low work-function of approximately 3.2 eV. A combination of photoemission spectroscopy and theoretical studies reveals that the delocalized conduction band derived from Ga 4s orbitals is responsible for the Ga₂O₃ films’ high conductivity. Furthermore, Si is shown to act as an efficient shallow donor, yielding high mobility up to approximately 60 cm²/Vs. The superior optoelectronic properties of SGO films make it a promising material for use as electrodes in high-power electronics and deep UV and organic-based optoelectronic devices.

Original language	English
Article number	100801
Number of pages	12
Journal	Cell Reports Physical Science
Volume	3
Issue number	3
Early online date	7 Mar 2022
DOIs	https://doi.org/10.1016/j.xcrp.2022.100801
Publication status	Published - 16 Mar 2022

Bibliographical note

Funding Information:
K.H.L.Z. is grateful for funding support from the National Natural Science Foundation of China (Grant No. 21872116 and 22075232). L.C. acknowledges support by the National Natural Science Foundation of China (No. 51972160) and the Science and Technology Research Items of Shenzhen (JCYJ20170412153325679, JCYJ20180504165650580). J.W. and D.O.S. acknowledge Diamond Light Source for co-sponsorship of an EngD studentship on the EPSRC Centre for Doctoral Training in Molecular Modeling and Materials Science (EP/L015862/1). D.O.S. acknowledges support for EPSRC (Grant number EP/N01572X/1). J.W. and D.O.S. acknowledge the use of the UCL Thomas High Performance Computing Facility (Thomas@UCL), and associated support services, in the completion of this work. W.C. acknowledges the support by the Singapore MOE (Grant MOE-000150-00). L.S.W. acknowledges the support of National Natural Science Foundation of China (Grant No. 51771157). We are grateful to the Diamond Light Source for access to beamline I09 under proposal number SI24219.

Publisher Copyright:
© 2022 The Author(s)

Keywords

electronic structure
GaO
transparent conducting oxide
wide-bandgap semiconductor
work-function

ASJC Scopus subject areas

General Chemistry
General Materials Science
General Engineering
General Energy
General Physics and Astronomy

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Cite this

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title = "Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide",

abstract = "Deep UV transparent thin films have recently attracted considerable attention owing to their potential in UV and organic-based optoelectronics. Here, we report the achievement of a deep UV transparent and highly conductive thin film based on Si-doped Ga2O3 (SGO) with high conductivity of 2500 S/cm. The SGO thin films exhibit high transparency over a wide spectrum ranging from visible light to deep UV wavelength and, meanwhile, have a very low work-function of approximately 3.2 eV. A combination of photoemission spectroscopy and theoretical studies reveals that the delocalized conduction band derived from Ga 4s orbitals is responsible for the Ga2O3 films{\textquoteright} high conductivity. Furthermore, Si is shown to act as an efficient shallow donor, yielding high mobility up to approximately 60 cm2/Vs. The superior optoelectronic properties of SGO films make it a promising material for use as electrodes in high-power electronics and deep UV and organic-based optoelectronic devices.",

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author = "Jiaye Zhang and Joe Willis and Zhenni Yang and Xu Lian and Wei Chen and Lai-Sen Wang and Xiangyu Xu and Lee, {Tien Lin} and Lang Chen and Scanlon, {David O.} and Zhang, {Kelvin H.L.}",

note = "Funding Information: K.H.L.Z. is grateful for funding support from the National Natural Science Foundation of China (Grant No. 21872116 and 22075232). L.C. acknowledges support by the National Natural Science Foundation of China (No. 51972160) and the Science and Technology Research Items of Shenzhen (JCYJ20170412153325679, JCYJ20180504165650580). J.W. and D.O.S. acknowledge Diamond Light Source for co-sponsorship of an EngD studentship on the EPSRC Centre for Doctoral Training in Molecular Modeling and Materials Science (EP/L015862/1). D.O.S. acknowledges support for EPSRC (Grant number EP/N01572X/1). J.W. and D.O.S. acknowledge the use of the UCL Thomas High Performance Computing Facility (Thomas@UCL), and associated support services, in the completion of this work. W.C. acknowledges the support by the Singapore MOE (Grant MOE-000150-00). L.S.W. acknowledges the support of National Natural Science Foundation of China (Grant No. 51771157). We are grateful to the Diamond Light Source for access to beamline I09 under proposal number SI24219. Publisher Copyright: {\textcopyright} 2022 The Author(s)",

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AU - Zhang, Jiaye

AU - Willis, Joe

AU - Yang, Zhenni

AU - Lian, Xu

AU - Chen, Wei

AU - Wang, Lai-Sen

AU - Xu, Xiangyu

AU - Lee, Tien Lin

AU - Chen, Lang

AU - Scanlon, David O.

AU - Zhang, Kelvin H.L.

N1 - Funding Information: K.H.L.Z. is grateful for funding support from the National Natural Science Foundation of China (Grant No. 21872116 and 22075232). L.C. acknowledges support by the National Natural Science Foundation of China (No. 51972160) and the Science and Technology Research Items of Shenzhen (JCYJ20170412153325679, JCYJ20180504165650580). J.W. and D.O.S. acknowledge Diamond Light Source for co-sponsorship of an EngD studentship on the EPSRC Centre for Doctoral Training in Molecular Modeling and Materials Science (EP/L015862/1). D.O.S. acknowledges support for EPSRC (Grant number EP/N01572X/1). J.W. and D.O.S. acknowledge the use of the UCL Thomas High Performance Computing Facility (Thomas@UCL), and associated support services, in the completion of this work. W.C. acknowledges the support by the Singapore MOE (Grant MOE-000150-00). L.S.W. acknowledges the support of National Natural Science Foundation of China (Grant No. 51771157). We are grateful to the Diamond Light Source for access to beamline I09 under proposal number SI24219. Publisher Copyright: © 2022 The Author(s)

PY - 2022/3/16

Y1 - 2022/3/16

N2 - Deep UV transparent thin films have recently attracted considerable attention owing to their potential in UV and organic-based optoelectronics. Here, we report the achievement of a deep UV transparent and highly conductive thin film based on Si-doped Ga2O3 (SGO) with high conductivity of 2500 S/cm. The SGO thin films exhibit high transparency over a wide spectrum ranging from visible light to deep UV wavelength and, meanwhile, have a very low work-function of approximately 3.2 eV. A combination of photoemission spectroscopy and theoretical studies reveals that the delocalized conduction band derived from Ga 4s orbitals is responsible for the Ga2O3 films’ high conductivity. Furthermore, Si is shown to act as an efficient shallow donor, yielding high mobility up to approximately 60 cm2/Vs. The superior optoelectronic properties of SGO films make it a promising material for use as electrodes in high-power electronics and deep UV and organic-based optoelectronic devices.

AB - Deep UV transparent thin films have recently attracted considerable attention owing to their potential in UV and organic-based optoelectronics. Here, we report the achievement of a deep UV transparent and highly conductive thin film based on Si-doped Ga2O3 (SGO) with high conductivity of 2500 S/cm. The SGO thin films exhibit high transparency over a wide spectrum ranging from visible light to deep UV wavelength and, meanwhile, have a very low work-function of approximately 3.2 eV. A combination of photoemission spectroscopy and theoretical studies reveals that the delocalized conduction band derived from Ga 4s orbitals is responsible for the Ga2O3 films’ high conductivity. Furthermore, Si is shown to act as an efficient shallow donor, yielding high mobility up to approximately 60 cm2/Vs. The superior optoelectronic properties of SGO films make it a promising material for use as electrodes in high-power electronics and deep UV and organic-based optoelectronic devices.

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Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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