Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular resist platform for extreme-ultraviolet lithography

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Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular resist platform for extreme-ultraviolet lithography. / Palmer, Richard; Frommhold, Andreas; Robinson, Alexander; Yang, Dongxu; McClelland, Alexandra; Roth, John; Ekinci, Yasin; Rosamond, Mark.

Advances in Patterning Materials and Processes XXXI. 2015.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Palmer, Richard ; Frommhold, Andreas ; Robinson, Alexander ; Yang, Dongxu ; McClelland, Alexandra ; Roth, John ; Ekinci, Yasin ; Rosamond, Mark. / Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular resist platform for extreme-ultraviolet lithography. Advances in Patterning Materials and Processes XXXI. 2015.

Bibtex

@inproceedings{73ea7fd569a247ac8f63dc6540c5228a,
title = "Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular resist platform for extreme-ultraviolet lithography",
abstract = "We have synthesized a new resist molecule and investigated its high-resolution capability. The material showed resolved line-spaces with 14 nm half-pitch (hp) and the potential to pattern 11 nm hp features. Line edge roughness values as low as 3.15 nm were seen in optimized formulations. The dose-to-size is estimated at around 20-30 mJ/cm2. The role of the molecule in the patterning process was studied by comparing it with structurally similar compounds. Furthermore we present first results from exposures of our materials at the Berkeley Micro Exposure Tool. Finally it is also demonstrated that the material works as a resist in 100 kV electron beam lithography as well. {\textcopyright} (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.",
author = "Richard Palmer and Andreas Frommhold and Alexander Robinson and Dongxu Yang and Alexandra McClelland and John Roth and Yasin Ekinci and Mark Rosamond",
year = "2015",
month = mar,
day = "20",
doi = "10.1117/12.2085672",
language = "English",
booktitle = "Advances in Patterning Materials and Processes XXXI",

}

RIS

TY - GEN

T1 - Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular resist platform for extreme-ultraviolet lithography

AU - Palmer, Richard

AU - Frommhold, Andreas

AU - Robinson, Alexander

AU - Yang, Dongxu

AU - McClelland, Alexandra

AU - Roth, John

AU - Ekinci, Yasin

AU - Rosamond, Mark

PY - 2015/3/20

Y1 - 2015/3/20

N2 - We have synthesized a new resist molecule and investigated its high-resolution capability. The material showed resolved line-spaces with 14 nm half-pitch (hp) and the potential to pattern 11 nm hp features. Line edge roughness values as low as 3.15 nm were seen in optimized formulations. The dose-to-size is estimated at around 20-30 mJ/cm2. The role of the molecule in the patterning process was studied by comparing it with structurally similar compounds. Furthermore we present first results from exposures of our materials at the Berkeley Micro Exposure Tool. Finally it is also demonstrated that the material works as a resist in 100 kV electron beam lithography as well. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

AB - We have synthesized a new resist molecule and investigated its high-resolution capability. The material showed resolved line-spaces with 14 nm half-pitch (hp) and the potential to pattern 11 nm hp features. Line edge roughness values as low as 3.15 nm were seen in optimized formulations. The dose-to-size is estimated at around 20-30 mJ/cm2. The role of the molecule in the patterning process was studied by comparing it with structurally similar compounds. Furthermore we present first results from exposures of our materials at the Berkeley Micro Exposure Tool. Finally it is also demonstrated that the material works as a resist in 100 kV electron beam lithography as well. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

U2 - 10.1117/12.2085672

DO - 10.1117/12.2085672

M3 - Conference contribution

BT - Advances in Patterning Materials and Processes XXXI

ER -