Topologically protected edge state in two-dimensional Su–Schrieffer–Heeger circuit

Research output: Contribution to journalArticle

Authors

  • Shuo Liu
  • Qian Zhang
  • Shaojie Ma
  • Lei Zhang
  • Yuan Jiang Xiang
  • Tie Jun Cui

Colleges, School and Institutes

External organisations

  • SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
  • Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT, UK
  • State Key Laboratory of Millimeter Waves, Southeast University, Nanjing, 210096, China

Abstract

Topological circuits, an exciting field just emerged over the last two years, have become a very accessible platform for realizing and exploring topological physics, with many of their physical phenomena and potential applications as yet to be discovered. In this work, we design and experimentally demonstrate a topologically nontrivial band structure and the associated topologically protected edge states in an RF circuit, which is composed of a collection of grounded capacitors connected by alternating inductors in the x and y directions, in analogy to the Su–Schrieffer–Heeger model. We take full control of the topological invariant (i.e., Zak phase) as well as the gap width of the band structure by simply tuning the circuit parameters. Excellent agreement is found between the experimental and simulation results, both showing obvious nontrivial edge state that is tightly bound to the circuit boundaries with extreme robustness against various types of defects. The demonstration of topological properties in circuits provides a convenient and flexible platform for studying topological materials and the possibility for developing flexible circuits with highly robust circuit performance.

Details

Original languageEnglish
Article number8609875
Pages (from-to)1-8
Number of pages8
JournalResearch
Volume2019
Publication statusPublished - 5 Feb 2019