Thin film LaYbO3 capacitive structures grown by pulsed laser deposition

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Thin film LaYbO3 capacitive structures grown by pulsed laser deposition. / Vasta, G.; Jackson, T.J.; Feteira, A.; Woodward, D.I.; Walker, D.; Thomas, P.A.

In: Thin Solid Films, Vol. 527, 01.01.2013, p. 81-86.

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Vasta, G. ; Jackson, T.J. ; Feteira, A. ; Woodward, D.I. ; Walker, D. ; Thomas, P.A. / Thin film LaYbO3 capacitive structures grown by pulsed laser deposition. In: Thin Solid Films. 2013 ; Vol. 527. pp. 81-86.

Bibtex

@article{b31f649b8caf4b4ea77053af01d2e930,
title = "Thin film LaYbO3 capacitive structures grown by pulsed laser deposition",
abstract = "The crystal structure and the dielectric properties of LaYbO3 films grown by pulsed laser deposition and integrated in SrRuO3/LaYbO3/SrRuO3 capacitive structures are reported. Two different fabrication procedures are assessed. When the SrRuO3/LaYbO3/SrRuO3 stack is grown in-situ, the relative permittivity of the LaYbO3 is 35. When instead the lower SrRuO3 electrode layer is patterned by contact photolithography and argon ion milling, prior to the deposition of the LaYbO3, the relative permittivity of the LaYbO3 is 55. In this case, post-growth annealing brings the relative permittivity towards that of the film grown in-situ. In both cases the relative permittivity is higher than the value measured in bulk material. This is attributed to the permittivity being highest along the orthorhombic c-axis. The annealing procedure produced a recrystallization of the LaYbO3 and of the SrRuO3.",
keywords = "Lanthanide ytterbium oxide, Thin films, Dielectric properties, Crystal structure, Pulsed Laser Deposition",
author = "G. Vasta and T.J. Jackson and A. Feteira and D.I. Woodward and D. Walker and P.A. Thomas",
year = "2013",
month = jan
day = "1",
doi = "10.1016/j.tsf.2012.12.006",
language = "English",
volume = "527",
pages = "81--86",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Thin film LaYbO3 capacitive structures grown by pulsed laser deposition

AU - Vasta, G.

AU - Jackson, T.J.

AU - Feteira, A.

AU - Woodward, D.I.

AU - Walker, D.

AU - Thomas, P.A.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - The crystal structure and the dielectric properties of LaYbO3 films grown by pulsed laser deposition and integrated in SrRuO3/LaYbO3/SrRuO3 capacitive structures are reported. Two different fabrication procedures are assessed. When the SrRuO3/LaYbO3/SrRuO3 stack is grown in-situ, the relative permittivity of the LaYbO3 is 35. When instead the lower SrRuO3 electrode layer is patterned by contact photolithography and argon ion milling, prior to the deposition of the LaYbO3, the relative permittivity of the LaYbO3 is 55. In this case, post-growth annealing brings the relative permittivity towards that of the film grown in-situ. In both cases the relative permittivity is higher than the value measured in bulk material. This is attributed to the permittivity being highest along the orthorhombic c-axis. The annealing procedure produced a recrystallization of the LaYbO3 and of the SrRuO3.

AB - The crystal structure and the dielectric properties of LaYbO3 films grown by pulsed laser deposition and integrated in SrRuO3/LaYbO3/SrRuO3 capacitive structures are reported. Two different fabrication procedures are assessed. When the SrRuO3/LaYbO3/SrRuO3 stack is grown in-situ, the relative permittivity of the LaYbO3 is 35. When instead the lower SrRuO3 electrode layer is patterned by contact photolithography and argon ion milling, prior to the deposition of the LaYbO3, the relative permittivity of the LaYbO3 is 55. In this case, post-growth annealing brings the relative permittivity towards that of the film grown in-situ. In both cases the relative permittivity is higher than the value measured in bulk material. This is attributed to the permittivity being highest along the orthorhombic c-axis. The annealing procedure produced a recrystallization of the LaYbO3 and of the SrRuO3.

KW - Lanthanide ytterbium oxide

KW - Thin films

KW - Dielectric properties

KW - Crystal structure

KW - Pulsed Laser Deposition

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84872594848&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2012.12.006

DO - 10.1016/j.tsf.2012.12.006

M3 - Article

AN - SCOPUS:84872594848

VL - 527

SP - 81

EP - 86

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -