The Permittivity of a Ferroelectric Film Beneath a Metal Electrode
Research output: Contribution to journal › Article
Colleges, School and Institutes
The permittivity of a ferroelectric n-type semiconductor varies smoothly with depth beneath a reversed biased Schottky contact. In partially depleted films, the depletion layer controls the capacitance. In fully depleted films the inverse capacitance is proportional to the thickness, which suggests that Schottky effects do not cause dead-layer behavior. (c) 2006 American Institute of Physics.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1 Jan 2006|