The Permittivity of a Ferroelectric Film Beneath a Metal Electrode
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Authors
Colleges, School and Institutes
Abstract
The permittivity of a ferroelectric n-type semiconductor varies smoothly with depth beneath a reversed biased Schottky contact. In partially depleted films, the depletion layer controls the capacitance. In fully depleted films the inverse capacitance is proportional to the thickness, which suggests that Schottky effects do not cause dead-layer behavior. (c) 2006 American Institute of Physics.
Details
Original language | English |
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Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 022908 |
Publication status | Published - 1 Jan 2006 |