The Permittivity of a Ferroelectric Film Beneath a Metal Electrode

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Authors

Colleges, School and Institutes

Abstract

The permittivity of a ferroelectric n-type semiconductor varies smoothly with depth beneath a reversed biased Schottky contact. In partially depleted films, the depletion layer controls the capacitance. In fully depleted films the inverse capacitance is proportional to the thickness, which suggests that Schottky effects do not cause dead-layer behavior. (c) 2006 American Institute of Physics.

Details

Original languageEnglish
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume89
Issue number022908
Publication statusPublished - 1 Jan 2006