The influence of quantum confinement on third-order nonlinearities in porous silicon thin films

Rihan Wu; Jack Collins; Leigh Canham; Andre Kaplan

doi:10.3390/app8101810

The influence of quantum confinement on third-order nonlinearities in porous silicon thin films

Rihan Wu, Jack Collins, Leigh Canham, Andre Kaplan

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

266 Downloads (Pure)

Abstract

We present an experimental investigation into the third-order nonlinearity of conventional crystalline (c-Si) and porous (p-Si) silicon with Z-scan technique at 800-nm and 2.4-μm wavelengths. The Gaussian decomposition method is applied to extract the nonlinear refractive index, n₂, and the two-photon absorption (TPA) coefficient, β, from the experimental results. The nonlinear refractive index obtained for c-Si is 7 ± 2 × 10^-6 cm²/GW and for p-Si is -9 ± 3 × 10^-5 cm²/GW. The TPA coefficient was found to be 2.9 ± 0.9 cm/GW and 1.0 ± 0.3 cm/GW for c-Si and p-Si, respectively. We show an enhancement of the nonlinear refraction and a suppression of TPA in p-Si in comparison to c-Si, and the enhancement gets stronger as the wavelength increases.

Original language	English
Article number	1810
Pages (from-to)	1810
Number of pages	9
Journal	Applied Sciences (Switzerland)
Volume	8
Issue number	10
DOIs	https://doi.org/10.3390/app8101810
Publication status	Published - 3 Oct 2018

Keywords

silicon
nonlinear nanophotonics
third-order nonlinearity
self-focusing
TPA
porous silicon
Z-scan

ASJC Scopus subject areas

Materials Science(all)
Instrumentation
Engineering(all)
Process Chemistry and Technology
Computer Science Applications
Fluid Flow and Transfer Processes

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Rihan_Wu_et_al_The_influence_of_quantum_confinement_on_third-order_nonlinearities_Applied_Sciences_2018
Checked for eligibility: 21/11/2018
Final published version, 301 KBLicence: Creative Commons: Attribution (CC BY)
Wu_et_al_The_influence_of_quantum_confinement_Applied_Sciences_2018
Published in Applied Sciences on 03/10/2018 https://doi.org/10.3390/app8101810
Final published version, 301 KBLicence: Creative Commons: Attribution (CC BY)

https://www.mdpi.com/2076-3417/8/10/1810Licence: Creative Commons: Attribution (CC BY)

Cite this

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title = "The influence of quantum confinement on third-order nonlinearities in porous silicon thin films",

abstract = "We present an experimental investigation into the third-order nonlinearity of conventional crystalline (c-Si) and porous (p-Si) silicon with Z-scan technique at 800-nm and 2.4-μm wavelengths. The Gaussian decomposition method is applied to extract the nonlinear refractive index, n2, and the two-photon absorption (TPA) coefficient, β, from the experimental results. The nonlinear refractive index obtained for c-Si is 7 ± 2 × 10-6 cm2/GW and for p-Si is -9 ± 3 × 10-5 cm2/GW. The TPA coefficient was found to be 2.9 ± 0.9 cm/GW and 1.0 ± 0.3 cm/GW for c-Si and p-Si, respectively. We show an enhancement of the nonlinear refraction and a suppression of TPA in p-Si in comparison to c-Si, and the enhancement gets stronger as the wavelength increases.",

keywords = "silicon, nonlinear nanophotonics, third-order nonlinearity, self-focusing, TPA, porous silicon, Z-scan",

author = "Rihan Wu and Jack Collins and Leigh Canham and Andre Kaplan",

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T1 - The influence of quantum confinement on third-order nonlinearities in porous silicon thin films

AU - Wu, Rihan

AU - Collins, Jack

AU - Canham, Leigh

AU - Kaplan, Andre

PY - 2018/10/3

Y1 - 2018/10/3

N2 - We present an experimental investigation into the third-order nonlinearity of conventional crystalline (c-Si) and porous (p-Si) silicon with Z-scan technique at 800-nm and 2.4-μm wavelengths. The Gaussian decomposition method is applied to extract the nonlinear refractive index, n2, and the two-photon absorption (TPA) coefficient, β, from the experimental results. The nonlinear refractive index obtained for c-Si is 7 ± 2 × 10-6 cm2/GW and for p-Si is -9 ± 3 × 10-5 cm2/GW. The TPA coefficient was found to be 2.9 ± 0.9 cm/GW and 1.0 ± 0.3 cm/GW for c-Si and p-Si, respectively. We show an enhancement of the nonlinear refraction and a suppression of TPA in p-Si in comparison to c-Si, and the enhancement gets stronger as the wavelength increases.

AB - We present an experimental investigation into the third-order nonlinearity of conventional crystalline (c-Si) and porous (p-Si) silicon with Z-scan technique at 800-nm and 2.4-μm wavelengths. The Gaussian decomposition method is applied to extract the nonlinear refractive index, n2, and the two-photon absorption (TPA) coefficient, β, from the experimental results. The nonlinear refractive index obtained for c-Si is 7 ± 2 × 10-6 cm2/GW and for p-Si is -9 ± 3 × 10-5 cm2/GW. The TPA coefficient was found to be 2.9 ± 0.9 cm/GW and 1.0 ± 0.3 cm/GW for c-Si and p-Si, respectively. We show an enhancement of the nonlinear refraction and a suppression of TPA in p-Si in comparison to c-Si, and the enhancement gets stronger as the wavelength increases.

KW - silicon

KW - nonlinear nanophotonics

KW - third-order nonlinearity

KW - self-focusing

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KW - Z-scan

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The influence of quantum confinement on third-order nonlinearities in porous silicon thin films

Abstract

Keywords

ASJC Scopus subject areas

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