Subnanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1 V open-circuit potential in dye-sensitized solar cells

Aravind Kumar Chandiran; Nicolas Tetreault; Robin Humphry-Baker; Florian Kessler; Etienne Baranoff; Chenyi Yi; Mohammad Khaja Nazeeruddin; Michael Grätzel

doi:10.1021/nl301023r

Subnanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1 V open-circuit potential in dye-sensitized solar cells

Aravind Kumar Chandiran, Nicolas Tetreault, Robin Humphry-Baker, Florian Kessler, Etienne Baranoff, Chenyi Yi, Mohammad Khaja Nazeeruddin, Michael Grätzel

Chemistry

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158 Citations (Scopus)

Abstract

Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga(2)O(3), the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO(2) conduction band and the hole injection into the electrolyte are characterized in detail.

Original language	English
Pages (from-to)	3941-7
Number of pages	7
Journal	Nano Letters
Volume	12
Issue number	8
DOIs	https://doi.org/10.1021/nl301023r
Publication status	Published - 8 Aug 2012

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@article{1f1bcb3ff2884109954b10da51e84137,

title = "Subnanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1 V open-circuit potential in dye-sensitized solar cells",

abstract = "Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga(2)O(3), the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO(2) conduction band and the hole injection into the electrolyte are characterized in detail.",

author = "Chandiran, {Aravind Kumar} and Nicolas Tetreault and Robin Humphry-Baker and Florian Kessler and Etienne Baranoff and Chenyi Yi and Nazeeruddin, {Mohammad Khaja} and Michael Gr{\"a}tzel",

year = "2012",

month = aug,

day = "8",

doi = "10.1021/nl301023r",

language = "English",

volume = "12",

pages = "3941--7",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "8",

}

TY - JOUR

T1 - Subnanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1 V open-circuit potential in dye-sensitized solar cells

AU - Chandiran, Aravind Kumar

AU - Tetreault, Nicolas

AU - Humphry-Baker, Robin

AU - Kessler, Florian

AU - Baranoff, Etienne

AU - Yi, Chenyi

AU - Nazeeruddin, Mohammad Khaja

AU - Grätzel, Michael

PY - 2012/8/8

Y1 - 2012/8/8

N2 - Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga(2)O(3), the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO(2) conduction band and the hole injection into the electrolyte are characterized in detail.

AB - Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga(2)O(3), the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO(2) conduction band and the hole injection into the electrolyte are characterized in detail.

U2 - 10.1021/nl301023r

DO - 10.1021/nl301023r

M3 - Article

C2 - 22681486

SN - 1530-6984

VL - 12

SP - 3941

EP - 3947

JO - Nano Letters

JF - Nano Letters

IS - 8

ER -

Subnanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1 V open-circuit potential in dye-sensitized solar cells

Abstract

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