Spin-on carbon based on fullerene derivatives as hardmask materials for high-aspect-ratio etching

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Abstract

The advance of lithographic resolution has made it necessary to adopt extremely thin photoresist films for the fabrication of “2× nm” structures in order to mitigate problems such as resist collapse during development but limiting achievable etch depths at the same time. By using multilayer hardmask stacks, a considerable increase in achievable aspect ratio is possible. We have previously presented a fullerene-based spin-on carbon hardmask material capable of high-aspect-ratio etching. We report our latest findings in material characterization of an original and a modified formulation. By using a higher adduct derivative fullerene, the solubility in industry-friendly solvents and thermal stability could be improved. The etching performance and materials characteristics of the new higher-adduct fullerene hardmask were found to be comparable to those of the original hardmask.

Details

Original languageEnglish
Article number033003
JournalJournal of Micro/Nanolithography, MEMS, and MOEMS
Volume12
Issue number3
Publication statusPublished - 9 Jul 2013