Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

Research output: Contribution to journalArticle

Standard

Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions. / Worledge, DC; Hu, Kuo-Juei; Abraham, DW; Sun, Jifeng; Trouilloud, PL; Nowak, J; Brown, S; Gaidis, MC; O'Sullivan, Ewan; Robertazzi, RP.

In: Applied Physics Letters, Vol. 98, No. 2, 01.01.2011, p. 022501-.

Research output: Contribution to journalArticle

Harvard

Worledge, DC, Hu, K-J, Abraham, DW, Sun, J, Trouilloud, PL, Nowak, J, Brown, S, Gaidis, MC, O'Sullivan, E & Robertazzi, RP 2011, 'Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions', Applied Physics Letters, vol. 98, no. 2, pp. 022501-. https://doi.org/10.1063/1.3536482

APA

Worledge, DC., Hu, K-J., Abraham, DW., Sun, J., Trouilloud, PL., Nowak, J., Brown, S., Gaidis, MC., O'Sullivan, E., & Robertazzi, RP. (2011). Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions. Applied Physics Letters, 98(2), 022501-. https://doi.org/10.1063/1.3536482

Vancouver

Worledge DC, Hu K-J, Abraham DW, Sun J, Trouilloud PL, Nowak J et al. Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions. Applied Physics Letters. 2011 Jan 1;98(2):022501-. https://doi.org/10.1063/1.3536482

Author

Worledge, DC ; Hu, Kuo-Juei ; Abraham, DW ; Sun, Jifeng ; Trouilloud, PL ; Nowak, J ; Brown, S ; Gaidis, MC ; O'Sullivan, Ewan ; Robertazzi, RP. / Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions. In: Applied Physics Letters. 2011 ; Vol. 98, No. 2. pp. 022501-.

Bibtex

@article{d5ad4e1787974c5f952863e0fc325f64,
title = "Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions",
abstract = "Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta|CoFeB|MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta|CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, Vc 50 ns=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model.",
keywords = "magnetic storage, perpendicular magnetic anisotropy, magnetic switching, cobalt alloys, boron alloys, magnesium compounds, magnetic tunnelling, iron alloys, antiferromagnetic materials, magnetic transitions",
author = "DC Worledge and Kuo-Juei Hu and DW Abraham and Jifeng Sun and PL Trouilloud and J Nowak and S Brown and MC Gaidis and Ewan O'Sullivan and RP Robertazzi",
year = "2011",
month = jan,
day = "1",
doi = "10.1063/1.3536482",
language = "English",
volume = "98",
pages = "022501--",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "2",

}

RIS

TY - JOUR

T1 - Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

AU - Worledge, DC

AU - Hu, Kuo-Juei

AU - Abraham, DW

AU - Sun, Jifeng

AU - Trouilloud, PL

AU - Nowak, J

AU - Brown, S

AU - Gaidis, MC

AU - O'Sullivan, Ewan

AU - Robertazzi, RP

PY - 2011/1/1

Y1 - 2011/1/1

N2 - Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta|CoFeB|MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta|CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, Vc 50 ns=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model.

AB - Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta|CoFeB|MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta|CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, Vc 50 ns=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model.

KW - magnetic storage

KW - perpendicular magnetic anisotropy

KW - magnetic switching

KW - cobalt alloys

KW - boron alloys

KW - magnesium compounds

KW - magnetic tunnelling

KW - iron alloys

KW - antiferromagnetic materials

KW - magnetic transitions

U2 - 10.1063/1.3536482

DO - 10.1063/1.3536482

M3 - Article

VL - 98

SP - 022501-

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

ER -