Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions
Research output: Contribution to journal › Article
Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta|CoFeB|MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta|CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, Vc 50 ns=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model.
|Journal||Applied Physics Letters|
|Publication status||Published - 1 Jan 2011|
- magnetic storage, perpendicular magnetic anisotropy, magnetic switching, cobalt alloys, boron alloys, magnesium compounds, magnetic tunnelling, iron alloys, antiferromagnetic materials, magnetic transitions