Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

DC Worledge; Kuo-Juei Hu; DW Abraham; Jifeng Sun; PL Trouilloud; J Nowak; S Brown; MC Gaidis; Ewan O'Sullivan; RP Robertazzi

doi:10.1063/1.3536482

Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

DC Worledge, Kuo-Juei Hu, DW Abraham, Jifeng Sun, PL Trouilloud, J Nowak, S Brown, MC Gaidis, Ewan O'Sullivan, RP Robertazzi

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Abstract

Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta|CoFeB|MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta|CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, Vc 50 ns=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model.

Original language	English
Pages (from-to)	022501-
Journal	Applied Physics Letters
Volume	98
Issue number	2
DOIs	https://doi.org/10.1063/1.3536482
Publication status	Published - 1 Jan 2011

Keywords

magnetic storage
perpendicular magnetic anisotropy
magnetic switching
cobalt alloys
boron alloys
magnesium compounds
magnetic tunnelling
iron alloys
antiferromagnetic materials
magnetic transitions

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10.1063/1.3536482

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title = "Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions",

abstract = "Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta|CoFeB|MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta|CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, Vc 50 ns=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model.",

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T1 - Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

AU - Worledge, DC

AU - Hu, Kuo-Juei

AU - Abraham, DW

AU - Sun, Jifeng

AU - Trouilloud, PL

AU - Nowak, J

AU - Brown, S

AU - Gaidis, MC

AU - O'Sullivan, Ewan

AU - Robertazzi, RP

PY - 2011/1/1

Y1 - 2011/1/1

N2 - Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta|CoFeB|MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta|CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, Vc 50 ns=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model.

AB - Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta|CoFeB|MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta|CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, Vc 50 ns=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model.

KW - magnetic storage

KW - perpendicular magnetic anisotropy

KW - magnetic switching

KW - cobalt alloys

KW - boron alloys

KW - magnesium compounds

KW - magnetic tunnelling

KW - iron alloys

KW - antiferromagnetic materials

KW - magnetic transitions

U2 - 10.1063/1.3536482

DO - 10.1063/1.3536482

M3 - Article

SN - 1077-3118

VL - 98

SP - 022501-

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

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Keywords

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