Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography

Carmen Popescu; Andreas Frommhold; Alexandra McClelland; John Roth; Yasin Ekinci; Alexander Robinson

doi:10.1117/12.2258098

Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography

Carmen Popescu, Andreas Frommhold, Alexandra McClelland, John Roth, Yasin Ekinci, Alexander Robinson

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Abstract

Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the multi-trigger concept. A series of studies such as resist purification, developer choice,and enhanced resist crosslinking were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 2.7 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to pattern 14 nm hp features with dose of 14 mJ/cm2 with an LWR of 4.9 nm. We have also begun to investigate the addition of high-Z additives to EUV photoresist as a means to increase sensitivity and modify secondary electron blur.

Original language	English
Article number	101430v
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10143
DOIs	https://doi.org/10.1117/12.2258098
Publication status	Published - 18 May 2017

Keywords

EUV lithography
resist sensitivity
chemical amplification
multi-trigger resist
molecular resist

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101430VFinal published version, 1.69 MBLicence: Creative Commons: Attribution (CC BY)

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title = "Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography",

abstract = "Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the multi-trigger concept. A series of studies such as resist purification, developer choice,and enhanced resist crosslinking were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 2.7 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to pattern 14 nm hp features with dose of 14 mJ/cm2 with an LWR of 4.9 nm. We have also begun to investigate the addition of high-Z additives to EUV photoresist as a means to increase sensitivity and modify secondary electron blur.",

keywords = "EUV lithography, resist sensitivity, chemical amplification, multi-trigger resist, molecular resist",

author = "Carmen Popescu and Andreas Frommhold and Alexandra McClelland and John Roth and Yasin Ekinci and Alexander Robinson",

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T1 - Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography

AU - Popescu, Carmen

AU - Frommhold, Andreas

AU - McClelland, Alexandra

AU - Roth, John

AU - Ekinci, Yasin

AU - Robinson, Alexander

PY - 2017/5/18

Y1 - 2017/5/18

N2 - Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the multi-trigger concept. A series of studies such as resist purification, developer choice,and enhanced resist crosslinking were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 2.7 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to pattern 14 nm hp features with dose of 14 mJ/cm2 with an LWR of 4.9 nm. We have also begun to investigate the addition of high-Z additives to EUV photoresist as a means to increase sensitivity and modify secondary electron blur.

AB - Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the multi-trigger concept. A series of studies such as resist purification, developer choice,and enhanced resist crosslinking were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 2.7 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to pattern 14 nm hp features with dose of 14 mJ/cm2 with an LWR of 4.9 nm. We have also begun to investigate the addition of high-Z additives to EUV photoresist as a means to increase sensitivity and modify secondary electron blur.

KW - EUV lithography

KW - resist sensitivity

KW - chemical amplification

KW - multi-trigger resist

KW - molecular resist

U2 - 10.1117/12.2258098

DO - 10.1117/12.2258098

M3 - Article

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VL - 10143

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 101430v

ER -

Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography

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Keywords

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