Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography

Research output: Contribution to journalArticlepeer-review

Authors

  • Carmen Popescu
  • Alexandra McClelland
  • John Roth
  • Yasin Ekinci

Colleges, School and Institutes

External organisations

  • IRRESISTIBLE MATERIALS LTD
  • Nano-C, Inc.
  • Paul Scherrer Institute

Abstract

Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the multi-trigger concept. A series of studies such as resist purification, developer choice,and enhanced resist crosslinking were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 2.7 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to pattern 14 nm hp features with dose of 14 mJ/cm2 with an LWR of 4.9 nm. We have also begun to investigate the addition of high-Z additives to EUV photoresist as a means to increase sensitivity and modify secondary electron blur.

Details

Original languageEnglish
Article number101430v
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume10143
Publication statusPublished - 18 May 2017

Keywords

  • EUV lithography, resist sensitivity, chemical amplification, multi-trigger resist, molecular resist