Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements

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@article{dfe356aaea3942d6a6de256422669dfa,
title = "Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements",
abstract = "We performed interferometric time-resolved simultaneous reflectance and transmittance measurements to investigate the carrier dynamics in pump-probe experiments on thin porous silicon membranes. The experimental data was analysed by using a method built on the Wentzel-Kramers-Brillouin approximation and the Drude model, allowing us to reconstruct the excited carriers{\textquoteright} non-uniform distribution in space and its evolution in time. The analysis revealed that the carrier dynamics in porous silicon, with ~50% porosity and native oxide chemistry, is governed by the Shockley-Read-Hall recombination process with a characteristic time constant of 375 picoseconds, whereas diffusion makes an insignificant contribution as it is suppressed by the high rate of scattering.",
keywords = "Silicon, Ultrafast photonics",
author = "Andre Kaplan and Leigh Canham and Rihan Wu and Igor Yurkevich",
year = "2018",
month = nov,
day = "21",
doi = "10.1038/s41598-018-35210-z",
language = "English",
volume = "8",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

RIS

TY - JOUR

T1 - Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements

AU - Kaplan, Andre

AU - Canham, Leigh

AU - Wu, Rihan

AU - Yurkevich, Igor

PY - 2018/11/21

Y1 - 2018/11/21

N2 - We performed interferometric time-resolved simultaneous reflectance and transmittance measurements to investigate the carrier dynamics in pump-probe experiments on thin porous silicon membranes. The experimental data was analysed by using a method built on the Wentzel-Kramers-Brillouin approximation and the Drude model, allowing us to reconstruct the excited carriers’ non-uniform distribution in space and its evolution in time. The analysis revealed that the carrier dynamics in porous silicon, with ~50% porosity and native oxide chemistry, is governed by the Shockley-Read-Hall recombination process with a characteristic time constant of 375 picoseconds, whereas diffusion makes an insignificant contribution as it is suppressed by the high rate of scattering.

AB - We performed interferometric time-resolved simultaneous reflectance and transmittance measurements to investigate the carrier dynamics in pump-probe experiments on thin porous silicon membranes. The experimental data was analysed by using a method built on the Wentzel-Kramers-Brillouin approximation and the Drude model, allowing us to reconstruct the excited carriers’ non-uniform distribution in space and its evolution in time. The analysis revealed that the carrier dynamics in porous silicon, with ~50% porosity and native oxide chemistry, is governed by the Shockley-Read-Hall recombination process with a characteristic time constant of 375 picoseconds, whereas diffusion makes an insignificant contribution as it is suppressed by the high rate of scattering.

KW - Silicon

KW - Ultrafast photonics

U2 - 10.1038/s41598-018-35210-z

DO - 10.1038/s41598-018-35210-z

M3 - Article

VL - 8

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 17172

ER -