Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements

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Colleges, School and Institutes


We performed interferometric time-resolved simultaneous reflectance and transmittance measurements to investigate the carrier dynamics in pump-probe experiments on thin porous silicon membranes. The experimental data was analysed by using a method built on the Wentzel-Kramers-Brillouin approximation and the Drude model, allowing us to reconstruct the excited carriers’ non-uniform distribution in space and its evolution in time. The analysis revealed that the carrier dynamics in porous silicon, with ~50% porosity and native oxide chemistry, is governed by the Shockley-Read-Hall recombination process with a characteristic time constant of 375 picoseconds, whereas diffusion makes an insignificant contribution as it is suppressed by the high rate of scattering.


Original languageEnglish
Article number17172
JournalScientific Reports
Publication statusPublished - 21 Nov 2018


  • Silicon, Ultrafast photonics