Reactive close field unbalance magnetron sputter deposition of titanium dioxides for potential photovoltaic applications

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Reactive close field unbalance magnetron sputter deposition of titanium dioxides for potential photovoltaic applications. / Zhang, Zhenxue; Shao, Guosheng.

In: Surface Engineering, 26.05.2016.

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@article{f2f8eb54f5b8467db3fac4fbe3512443,
title = "Reactive close field unbalance magnetron sputter deposition of titanium dioxides for potential photovoltaic applications",
abstract = "In this paper, crystallised TiO2 thin film was produced by reactive Closed Field UnBalanced Magnetron Sputter Ion Plating. Various deposition conditions were studied, including sputtering power, oxygen partial pressure and elemental doping and their effects on the resulting titania structure were characterised. Rutile or anatase titania can be obtained selectively or in combination by properly controlling the deposition conditions, i.e. rutile structure can be obtained using one titanium target with high oxygen flow (20% OEM) and be enhanced by manganese doping, and fully anatase structure can be formed by preheating the sample with an auxiliary heater and heating the sample in the reactive sputtering process.TiO2 has a wide band gap (3.2 eV for anatase and 3.0 eV for rutile) which limits its ability to absorb the light to the ultraviolet region. N and/or Mn doping in the thin titanium dioxide films was used to narrow the band gap of TiO2 to about 2.0 eV with improved electrical properties.",
keywords = " Reactive sputtering, Titania, Photovoltaic",
author = "Zhenxue Zhang and Guosheng Shao",
year = "2016",
month = may,
day = "26",
doi = "10.1080/02670844.2016.1179022",
language = "English",
journal = "Surface Engineering",
issn = "0267-0844",
publisher = "Maney Publishing",

}

RIS

TY - JOUR

T1 - Reactive close field unbalance magnetron sputter deposition of titanium dioxides for potential photovoltaic applications

AU - Zhang, Zhenxue

AU - Shao, Guosheng

PY - 2016/5/26

Y1 - 2016/5/26

N2 - In this paper, crystallised TiO2 thin film was produced by reactive Closed Field UnBalanced Magnetron Sputter Ion Plating. Various deposition conditions were studied, including sputtering power, oxygen partial pressure and elemental doping and their effects on the resulting titania structure were characterised. Rutile or anatase titania can be obtained selectively or in combination by properly controlling the deposition conditions, i.e. rutile structure can be obtained using one titanium target with high oxygen flow (20% OEM) and be enhanced by manganese doping, and fully anatase structure can be formed by preheating the sample with an auxiliary heater and heating the sample in the reactive sputtering process.TiO2 has a wide band gap (3.2 eV for anatase and 3.0 eV for rutile) which limits its ability to absorb the light to the ultraviolet region. N and/or Mn doping in the thin titanium dioxide films was used to narrow the band gap of TiO2 to about 2.0 eV with improved electrical properties.

AB - In this paper, crystallised TiO2 thin film was produced by reactive Closed Field UnBalanced Magnetron Sputter Ion Plating. Various deposition conditions were studied, including sputtering power, oxygen partial pressure and elemental doping and their effects on the resulting titania structure were characterised. Rutile or anatase titania can be obtained selectively or in combination by properly controlling the deposition conditions, i.e. rutile structure can be obtained using one titanium target with high oxygen flow (20% OEM) and be enhanced by manganese doping, and fully anatase structure can be formed by preheating the sample with an auxiliary heater and heating the sample in the reactive sputtering process.TiO2 has a wide band gap (3.2 eV for anatase and 3.0 eV for rutile) which limits its ability to absorb the light to the ultraviolet region. N and/or Mn doping in the thin titanium dioxide films was used to narrow the band gap of TiO2 to about 2.0 eV with improved electrical properties.

KW - Reactive sputtering

KW - Titania

KW - Photovoltaic

U2 - 10.1080/02670844.2016.1179022

DO - 10.1080/02670844.2016.1179022

M3 - Article

JO - Surface Engineering

JF - Surface Engineering

SN - 0267-0844

ER -