Polysubstituted derivatives of triphenylene as high resolution electron beam resists for nanolithography

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@article{3d5695f24a9a447ab49054ade906b577,
title = "Polysubstituted derivatives of triphenylene as high resolution electron beam resists for nanolithography",
abstract = "We have explored the application of polysubstituted derivatives of triphenylene as high resolution, high etch durability electron beam resists. Room temperature spin coating was used to produce films of the derivatives on silicon substrates. Exposure to a 20 keV electron beam was found to alter the dissolution rate of these derivatives in various organic solvents. Doses of between similar to3 x 10(-4) and similar to2.5 x 10(-3) C/cm(2) substantially increased the solubility of the derivative hexapentyloxytriphenylene in polar solvents (positive tone behavior). Doses greater than similar to2.5 x 10(-3) C/cm(2) led to a decrease in solubility in both polar and nonpolar solvents (negative tone behavior). Other derivatives also demonstrated a reduction in their dissolution rate for doses between similar to1.5 x 10(-3) and similar to6.5 x 10(-3) C/cm(2). The etch durabilities of the positive and negative tone patterns were found to be, respectively, similar to 25% less and similar to 70% greater than that of a conventional novolac based negative tone resist. Line and space patterns were defined in one of the resists with a resolution of similar to 14 nm and structures with an aspect ratio of similar to 50-1 were etched into silicon. (C) 2000 American Vacuum Society. [S0734-211X(00)13806-5].",
author = "Alexander Robinson and Richard Palmer and T Tada and T Kanayama and MT Allen and Jon Preece and Kenneth Harris",
year = "2000",
month = nov,
day = "1",
doi = "10.1116/1.1322045",
language = "English",
volume = "18",
pages = "2730--2736",
journal = "Journal of Vacuum Science and Technology. Part B. Nanotechnology & Microelectronics",
issn = "0734-211X",
publisher = "American Institute of Physics",
number = "6",

}

RIS

TY - JOUR

T1 - Polysubstituted derivatives of triphenylene as high resolution electron beam resists for nanolithography

AU - Robinson, Alexander

AU - Palmer, Richard

AU - Tada, T

AU - Kanayama, T

AU - Allen, MT

AU - Preece, Jon

AU - Harris, Kenneth

PY - 2000/11/1

Y1 - 2000/11/1

N2 - We have explored the application of polysubstituted derivatives of triphenylene as high resolution, high etch durability electron beam resists. Room temperature spin coating was used to produce films of the derivatives on silicon substrates. Exposure to a 20 keV electron beam was found to alter the dissolution rate of these derivatives in various organic solvents. Doses of between similar to3 x 10(-4) and similar to2.5 x 10(-3) C/cm(2) substantially increased the solubility of the derivative hexapentyloxytriphenylene in polar solvents (positive tone behavior). Doses greater than similar to2.5 x 10(-3) C/cm(2) led to a decrease in solubility in both polar and nonpolar solvents (negative tone behavior). Other derivatives also demonstrated a reduction in their dissolution rate for doses between similar to1.5 x 10(-3) and similar to6.5 x 10(-3) C/cm(2). The etch durabilities of the positive and negative tone patterns were found to be, respectively, similar to 25% less and similar to 70% greater than that of a conventional novolac based negative tone resist. Line and space patterns were defined in one of the resists with a resolution of similar to 14 nm and structures with an aspect ratio of similar to 50-1 were etched into silicon. (C) 2000 American Vacuum Society. [S0734-211X(00)13806-5].

AB - We have explored the application of polysubstituted derivatives of triphenylene as high resolution, high etch durability electron beam resists. Room temperature spin coating was used to produce films of the derivatives on silicon substrates. Exposure to a 20 keV electron beam was found to alter the dissolution rate of these derivatives in various organic solvents. Doses of between similar to3 x 10(-4) and similar to2.5 x 10(-3) C/cm(2) substantially increased the solubility of the derivative hexapentyloxytriphenylene in polar solvents (positive tone behavior). Doses greater than similar to2.5 x 10(-3) C/cm(2) led to a decrease in solubility in both polar and nonpolar solvents (negative tone behavior). Other derivatives also demonstrated a reduction in their dissolution rate for doses between similar to1.5 x 10(-3) and similar to6.5 x 10(-3) C/cm(2). The etch durabilities of the positive and negative tone patterns were found to be, respectively, similar to 25% less and similar to 70% greater than that of a conventional novolac based negative tone resist. Line and space patterns were defined in one of the resists with a resolution of similar to 14 nm and structures with an aspect ratio of similar to 50-1 were etched into silicon. (C) 2000 American Vacuum Society. [S0734-211X(00)13806-5].

U2 - 10.1116/1.1322045

DO - 10.1116/1.1322045

M3 - Article

VL - 18

SP - 2730

EP - 2736

JO - Journal of Vacuum Science and Technology. Part B. Nanotechnology & Microelectronics

JF - Journal of Vacuum Science and Technology. Part B. Nanotechnology & Microelectronics

SN - 0734-211X

IS - 6

ER -