p-n diode with hole- and electron-doped lanthanum manganites

Research output: Contribution to journalLetter

Authors

  • C Mitra
  • G Kobernik
  • K Dorr
  • KH Muller
  • L Schultz
  • R Pinto

Colleges, School and Institutes

Abstract

The hole-doped (p-) manganite La0.7Ca0.3MnO3 and the electron-doped (n-) manganite La0.7Ce0.3MnO3 undergo an insulator-to-metal transition at around 250 K, above which both behave as a polaronic semiconductor. We have fabricated an epitaxial trilayer (La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3), where SrTiO3 is an insulator. At room temperature, i.e., in the semiconducting regime, it exhibits asymmetric current-voltage (I-V) characteristics akin to a p-n diode. The observed asymmetry in the I-V characteristics disappears at low temperatures where both the manganite layers are metallic. These results indicate that using the polaronic semiconducting regime of doped manganites, a p-n diode can be constructed. (C) 2001 American Institute of Physics.

Details

Original languageEnglish
Pages (from-to)2408-2410
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number15
Publication statusPublished - 1 Jan 2001