p-n diode with hole- and electron-doped lanthanum manganites
Research output: Contribution to journal › Letter
Authors
Colleges, School and Institutes
Abstract
The hole-doped (p-) manganite La0.7Ca0.3MnO3 and the electron-doped (n-) manganite La0.7Ce0.3MnO3 undergo an insulator-to-metal transition at around 250 K, above which both behave as a polaronic semiconductor. We have fabricated an epitaxial trilayer (La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3), where SrTiO3 is an insulator. At room temperature, i.e., in the semiconducting regime, it exhibits asymmetric current-voltage (I-V) characteristics akin to a p-n diode. The observed asymmetry in the I-V characteristics disappears at low temperatures where both the manganite layers are metallic. These results indicate that using the polaronic semiconducting regime of doped manganites, a p-n diode can be constructed. (C) 2001 American Institute of Physics.
Details
Original language | English |
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Pages (from-to) | 2408-2410 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 79 |
Issue number | 15 |
Publication status | Published - 1 Jan 2001 |