Performance of negative tone chemically amplified fullerene resists in extreme ultraviolet lithography

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  • Andreas Frommhold
  • Dongxu Yang
  • Alexandra Mcclelland
  • Xiang Xue
  • Yasin Ekinci


Abstract. With extreme ultraviolet lithography (EUVL) emerging as one of the top contenders to succeed from optical lithography for the production of next generation semiconductor devices, the search for suitable resists that combine high resolution, low line edge roughness (LER) and commercially viable sensitivity for high volume production is still ongoing. One promising approach to achieve these goals has been the development of molecular resists. Here we report our investigations into the EUV lithographic performance of a molecular fullerene resist showing resolution down to 20-nm half-pitch with interference lithography with a LER of >5  nm and sensitivity of about 20  mJ/cm2.


Original languageEnglish
Article number033010
JournalJournal of Micro/Nanolithography, MEMS, and MOEMS
Issue number3
Publication statusPublished - 12 Aug 2013


  • extreme ultraviolet lithography, molecular resist, fullerene, chemically amplified resist