Performance of a high resolution chemically amplified electron beam resist at various beam energies

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Performance of a high resolution chemically amplified electron beam resist at various beam energies. / Palmer, Richard; Yang, Dongxu; Frommhold, Andreas; McClelland, A.; Roth, J.; Rosamond, M.; Linfield, E.H.; Osmond, J. ; Robinson, Alexander.

In: Microelectronic Engineering, Vol. 155, 02.04.2016, p. 97-101.

Research output: Contribution to journalArticle

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Palmer, Richard ; Yang, Dongxu ; Frommhold, Andreas ; McClelland, A. ; Roth, J. ; Rosamond, M. ; Linfield, E.H. ; Osmond, J. ; Robinson, Alexander. / Performance of a high resolution chemically amplified electron beam resist at various beam energies. In: Microelectronic Engineering. 2016 ; Vol. 155. pp. 97-101.

Bibtex

@article{207fa4fa826b407eadb22c2b3d6c8d8c,
title = "Performance of a high resolution chemically amplified electron beam resist at various beam energies",
abstract = "A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.",
keywords = "Electron beam lithography, Molecular resist, Chemically amplification, Electron beam energy",
author = "Richard Palmer and Dongxu Yang and Andreas Frommhold and A. McClelland and J. Roth and M. Rosamond and E.H. Linfield and J. Osmond and Alexander Robinson",
year = "2016",
month = apr,
day = "2",
doi = "10.1016/j.mee.2016.03.010",
language = "English",
volume = "155",
pages = "97--101",
journal = "Microelectron Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Performance of a high resolution chemically amplified electron beam resist at various beam energies

AU - Palmer, Richard

AU - Yang, Dongxu

AU - Frommhold, Andreas

AU - McClelland, A.

AU - Roth, J.

AU - Rosamond, M.

AU - Linfield, E.H.

AU - Osmond, J.

AU - Robinson, Alexander

PY - 2016/4/2

Y1 - 2016/4/2

N2 - A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.

AB - A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.

KW - Electron beam lithography

KW - Molecular resist

KW - Chemically amplification

KW - Electron beam energy

U2 - 10.1016/j.mee.2016.03.010

DO - 10.1016/j.mee.2016.03.010

M3 - Article

VL - 155

SP - 97

EP - 101

JO - Microelectron Engineering

JF - Microelectron Engineering

SN - 0167-9317

ER -