Performance of a high resolution chemically amplified electron beam resist at various beam energies
Research output: Contribution to journal › Article
- IRRESISTIBLE MATERIALS LTD
- Nano-C, Inc.
- University of Leeds
- ICFO, The Institute of Photonic Sciences, Mediterranean Technology Park, Barcelona 08860
A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.
|Early online date||5 Mar 2016|
|Publication status||Published - 2 Apr 2016|
- Electron beam lithography, Molecular resist, Chemically amplification, Electron beam energy