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Abstract
Patterned arrays of porous InP have been produced using electrochemical etching method at room temperature in combination with photolithography. n-type InP wafers with (001) orientation were used as the anode, and gold was used as the cathode. The porous structure was produced in either aqueous HCl or a mixture of HCl and HNO3 with a voltage bias ranging from 2 to 10 V. Alternating stripes of porous and nonporous InP have been fabricated on an InP substrate by etching a masked sample. Surface morphology measurements and cross sectional analysis of the porous layer have been conducted using atomic force microscopy and scanning electron microscopy. Photoluminescence from the porous surface shows a significant suppression of the interband transition. An energy barrier at the porous/bulk InP interface, identified from conductance measurements, is proposed to arise from the effect of surface states. (C) 2003 American Institute of Physics.
Original language | English |
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Pages (from-to) | 7598-7603 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1 Jan 2003 |
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Dive into the research topics of 'Patterned arrays of porous InP from photolithography and electrochemical etching'. Together they form a unique fingerprint.Projects
- 1 Finished
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PLATFORM: Nanostructured Surfaces
Palmer, R., Guo, Q., Harrison, R., Heath, J., Jones, I., Li, Z., Moss, P. & Robinson, A.
Engineering & Physical Science Research Council
1/12/02 → 31/05/07
Project: Research Councils