Oxide-coated silicon nanowire array capacitor electrodes in room temperature ionic liquid

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Oxide-coated silicon nanowire array capacitor electrodes in room temperature ionic liquid. / Qiao, L.; Shougee, A.; Albrecht, T.; Fobelets, K.

In: Electrochimica Acta, Vol. 210, 13.05.2016.

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@article{41f8a365cc1943bca7549e727e5f4faa,
title = "Oxide-coated silicon nanowire array capacitor electrodes in room temperature ionic liquid",
abstract = "Improved performance of Si nanowire arrays for capacitor electrodes in ionic liquid [Bmim][NTf2], is obtained by spin-on-doping the nanowires followed by hot, concentrated nitric acid oxidation. n- and p-type Si nanowire arrays are fabricated via a 2-step metal-assisted chemical etch process to increase the effective surface area. Spin-on-doping increases the doping density of the nanowires, enhancing the current by a factor of more than 3. The well-controlled HNO3 oxidation defines a thin, dense oxide layer on the Si nanowires increasing chemical stability, both expanding the electrochemical window and increasing the current further by a factor >2. Specific capacitances of 238 μF cm−2 (∼0.4 F g−1, 159 mF cm−3) and 404 μF cm−2 (∼0.7 F g−1, 269 mF cm−3) are obtained for n- and p-type Si nanowire arrays, respectively.",
author = "L. Qiao and A. Shougee and T. Albrecht and K. Fobelets",
year = "2016",
month = may,
day = "13",
doi = "10.1016/j.electacta.2016.05.088",
language = "English",
volume = "210",
journal = "Electrochimica Acta",
issn = "0013-4686",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Oxide-coated silicon nanowire array capacitor electrodes in room temperature ionic liquid

AU - Qiao, L.

AU - Shougee, A.

AU - Albrecht, T.

AU - Fobelets, K.

PY - 2016/5/13

Y1 - 2016/5/13

N2 - Improved performance of Si nanowire arrays for capacitor electrodes in ionic liquid [Bmim][NTf2], is obtained by spin-on-doping the nanowires followed by hot, concentrated nitric acid oxidation. n- and p-type Si nanowire arrays are fabricated via a 2-step metal-assisted chemical etch process to increase the effective surface area. Spin-on-doping increases the doping density of the nanowires, enhancing the current by a factor of more than 3. The well-controlled HNO3 oxidation defines a thin, dense oxide layer on the Si nanowires increasing chemical stability, both expanding the electrochemical window and increasing the current further by a factor >2. Specific capacitances of 238 μF cm−2 (∼0.4 F g−1, 159 mF cm−3) and 404 μF cm−2 (∼0.7 F g−1, 269 mF cm−3) are obtained for n- and p-type Si nanowire arrays, respectively.

AB - Improved performance of Si nanowire arrays for capacitor electrodes in ionic liquid [Bmim][NTf2], is obtained by spin-on-doping the nanowires followed by hot, concentrated nitric acid oxidation. n- and p-type Si nanowire arrays are fabricated via a 2-step metal-assisted chemical etch process to increase the effective surface area. Spin-on-doping increases the doping density of the nanowires, enhancing the current by a factor of more than 3. The well-controlled HNO3 oxidation defines a thin, dense oxide layer on the Si nanowires increasing chemical stability, both expanding the electrochemical window and increasing the current further by a factor >2. Specific capacitances of 238 μF cm−2 (∼0.4 F g−1, 159 mF cm−3) and 404 μF cm−2 (∼0.7 F g−1, 269 mF cm−3) are obtained for n- and p-type Si nanowire arrays, respectively.

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84971574856&partnerID=MN8TOARS

U2 - 10.1016/j.electacta.2016.05.088

DO - 10.1016/j.electacta.2016.05.088

M3 - Article

VL - 210

JO - Electrochimica Acta

JF - Electrochimica Acta

SN - 0013-4686

ER -