Osmium Atoms and Os2 Molecules Move Faster on Selenium-Doped Compared to Sulfur-Doped Boronic Graphenic Surfaces

Research output: Contribution to journalArticlepeer-review


  • Nicolas P.E. Barry
  • Anaïs Pitto-Barry
  • Johanna Tran
  • Simon E.F. Spencer
  • Adam M. Johansen
  • Ana M. Sanchez
  • Robert J. Deeth
  • Richard Beanland
  • Peter J. Sadler

Colleges, School and Institutes


We deposited Os atoms on S- and Se-doped boronic graphenic surfaces by electron bombardment of micelles containing 16e complexes [Os(p-cymene)(1,2-dicarba-closo-dodecarborane-1,2-diselenate/dithiolate)] encapsulated in a triblock copolymer. The surfaces were characterized by energy-dispersive X-ray (EDX) analysis and electron energy loss spectroscopy of energy filtered TEM (EFTEM). Os atoms moved ca. 26× faster on the B/Se surface compared to the B/S surface (233 ± 34 pm·s-1 versus 8.9 ± 1.9 pm·s-1). Os atoms formed dimers with an average Os-Os distance of 0.284 ± 0.077 nm on the B/Se surface and 0.243 ± 0.059 nm on B/S, close to that in metallic Os. The Os2 molecules moved 0.83× and 0.65× more slowly than single Os atoms on B/S and B/Se surfaces, respectively, and again markedly faster (ca. 20×) on the B/Se surface (151 ± 45 pm·s-1 versus 7.4 ± 2.8 pm·s-1). Os atom motion did not follow Brownian motion and appears to involve anchoring sites, probably S and Se atoms. The ability to control the atomic motion of metal atoms and molecules on surfaces has potential for exploitation in nanodevices of the future.


Original languageEnglish
Pages (from-to)5100-5105
Number of pages6
JournalChemistry of Materials
Issue number14
Early online date6 Jul 2015
Publication statusPublished - 28 Jul 2015