Osmium Atoms and Os2 Molecules Move Faster on Selenium-Doped Compared to Sulfur-Doped Boronic Graphenic Surfaces

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Authors

  • Nicolas P.E. Barry
  • Anaïs Pitto-Barry
  • Johanna Tran
  • Simon E.F. Spencer
  • Adam M. Johansen
  • Ana M. Sanchez
  • Robert J. Deeth
  • Richard Beanland
  • Peter J. Sadler

Colleges, School and Institutes

Abstract

We deposited Os atoms on S- and Se-doped boronic graphenic surfaces by electron bombardment of micelles containing 16e complexes [Os(p-cymene)(1,2-dicarba-closo-dodecarborane-1,2-diselenate/dithiolate)] encapsulated in a triblock copolymer. The surfaces were characterized by energy-dispersive X-ray (EDX) analysis and electron energy loss spectroscopy of energy filtered TEM (EFTEM). Os atoms moved ca. 26× faster on the B/Se surface compared to the B/S surface (233 ± 34 pm·s-1 versus 8.9 ± 1.9 pm·s-1). Os atoms formed dimers with an average Os-Os distance of 0.284 ± 0.077 nm on the B/Se surface and 0.243 ± 0.059 nm on B/S, close to that in metallic Os. The Os2 molecules moved 0.83× and 0.65× more slowly than single Os atoms on B/S and B/Se surfaces, respectively, and again markedly faster (ca. 20×) on the B/Se surface (151 ± 45 pm·s-1 versus 7.4 ± 2.8 pm·s-1). Os atom motion did not follow Brownian motion and appears to involve anchoring sites, probably S and Se atoms. The ability to control the atomic motion of metal atoms and molecules on surfaces has potential for exploitation in nanodevices of the future.

Details

Original languageEnglish
Pages (from-to)5100-5105
Number of pages6
JournalChemistry of Materials
Volume27
Issue number14
Early online date6 Jul 2015
Publication statusPublished - 28 Jul 2015