On nucleation and growth mechanisms of EBPVD zirconia films on porous NiO-ZrO2 substrate

O. Vasylyev, M. Brychevskyi, I. Brodnikovskyi, L. Dubykivskyi, M. Andrzejczuk, M. Spychalski, M. Lewandowska, K. Kurzydlowski, R. Steinberger-Wilckens, J. Mertens, J. Malzbender

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin structure of the anode-electrolyte interface (AEI) was studied, and plausible nucleation and growth mechanisms at electron-beam physical vapor deposition (EB-PVD) were established. ZrO2 condensates with two mechanisms - planar and cellular ones like it happens at solidification from liquid phase. ZrO2 condensation on ZrO2 and NiO phases occurs with two different routes. On ZrO2 phase, layer of planar growth is formed with 'defective layer by defective layer' mechanism. On NiO, the layer is cellular from the very beginning of the deposition process. The layer of planar growth is formed as 'dense layer by dense layer'. Deposition affected zone (DAZ) is clearly distinguished.

Original languageEnglish
Title of host publication2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)
EditorsM. Shpotyuk
PublisherIEEE
Pages92-93
Number of pages2
ISBN (Electronic)9781467344937
ISBN (Print)9781467344913
DOIs
Publication statusPublished - 21 Feb 2013
EventInternational Conference on Oxide Materials for Electronic Engineering, OMEE 2012 - Lviv, United Kingdom
Duration: 3 Sept 20127 Sept 2012

Publication series

NameIEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)
PublisherIEEE

Conference

ConferenceInternational Conference on Oxide Materials for Electronic Engineering, OMEE 2012
Country/TerritoryUnited Kingdom
CityLviv
Period3/09/127/09/12

Keywords

  • influence of substrate
  • nucleation and growth mechanisms
  • solid oxide fuel cell
  • zirconia EB-PVD film

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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