On a Multiple-Scales Analysis of Multilateral Phenomena in Semiconductor Lasers

BP Cox, Warren Smith

Research output: Contribution to journalArticle

Abstract

A mathematical model describing the coupling of electrical and optical effects in the active region of a realistic semiconductor laser medium is introduced. The weakly nonlinear analysis which follows gives rise to a leading-order problem describing three lateral modes. At the next order, the secularity conditions exhibit competition for photons and modal interaction. By making further assumptions, a partially lumped model is deduced which has no counterpart in the existing literature; this simplified system consists of one parabolic and six first-order hyperbolic partial differential equations. Predictions of this partially lumped model are compared with experimental observations.
Original languageEnglish
Pages (from-to)1-21
Number of pages21
JournalSIAM Journal on Applied Mathematics
Volume69
Issue number1
DOIs
Publication statusPublished - 1 Jan 2008

Keywords

  • semiconductor lasers
  • asymptotics
  • multilateral phenomena

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