Nucleation in Si(001) Homoepitaxial Growth

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Authors

Colleges, School and Institutes

Abstract

From low energy electron microscopy observations of the surface topography of Si(001) during homoepitaxial growth at 650 ±C, we have determined the nucleation density profile on top of a “base” island, and the distribution of the base island radius at the time of nucleation. Comparison with homogeneous nucleation theory yields a typical critical nucleus size of ,650 dimers, and allows nucleation on Si(001) to be understood in a common framework with equilibrium step-edge fluctuations and 2D island ripening.

Details

Original languageEnglish
Pages (from-to)2770-2773
JournalPhysical Review Letters
Volume76
Issue number15
Publication statusPublished - 8 Apr 1996