Nucleation in Si(001) Homoepitaxial Growth
Research output: Contribution to journal › Article › peer-review
Colleges, School and Institutes
From low energy electron microscopy observations of the surface topography of Si(001) during homoepitaxial growth at 650 ±C, we have determined the nucleation density profile on top of a “base” island, and the distribution of the base island radius at the time of nucleation. Comparison with homogeneous nucleation theory yields a typical critical nucleus size of ,650 dimers, and allows nucleation on Si(001) to be understood in a common framework with equilibrium step-edge fluctuations and 2D island ripening.
|Journal||Physical Review Letters|
|Publication status||Published - 8 Apr 1996|