Nuclear quadruple holeburning in preparation-dependent EuVO4

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Nuclear quadruple holeburning in preparation-dependent EuVO4. / Hansen, PC; Lazzouni, M; Leask, MJM; Wanklyn, BM; Watts, BE.

In: Le Journal de Physique Colloques, Vol. 49, No. C8, 1988, p. C8-889-C8-890.

Research output: Contribution to journalArticlepeer-review

Harvard

Hansen, PC, Lazzouni, M, Leask, MJM, Wanklyn, BM & Watts, BE 1988, 'Nuclear quadruple holeburning in preparation-dependent EuVO4', Le Journal de Physique Colloques, vol. 49, no. C8, pp. C8-889-C8-890. https://doi.org/10.1051/jphyscol:19888403

APA

Vancouver

Author

Hansen, PC ; Lazzouni, M ; Leask, MJM ; Wanklyn, BM ; Watts, BE. / Nuclear quadruple holeburning in preparation-dependent EuVO4. In: Le Journal de Physique Colloques. 1988 ; Vol. 49, No. C8. pp. C8-889-C8-890.

Bibtex

@article{2101beff5bf34009ac1758045fbea743,
title = "Nuclear quadruple holeburning in preparation-dependent EuVO4",
abstract = "This paper reports on the study of EuVO4 samples grown from different fluxes. It is the first application of optical holeburning to investigate preparation-dependency between defect lines in samples of nominally the same compound. Analysis suggests that very few of the defect lines are common to the different growths.",
author = "PC Hansen and M Lazzouni and MJM Leask and BM Wanklyn and BE Watts",
year = "1988",
doi = "10.1051/jphyscol:19888403",
language = "English",
volume = "49",
pages = "C8--889--C8--890",
journal = "Le Journal de Physique Colloques",
number = "C8",

}

RIS

TY - JOUR

T1 - Nuclear quadruple holeburning in preparation-dependent EuVO4

AU - Hansen, PC

AU - Lazzouni, M

AU - Leask, MJM

AU - Wanklyn, BM

AU - Watts, BE

PY - 1988

Y1 - 1988

N2 - This paper reports on the study of EuVO4 samples grown from different fluxes. It is the first application of optical holeburning to investigate preparation-dependency between defect lines in samples of nominally the same compound. Analysis suggests that very few of the defect lines are common to the different growths.

AB - This paper reports on the study of EuVO4 samples grown from different fluxes. It is the first application of optical holeburning to investigate preparation-dependency between defect lines in samples of nominally the same compound. Analysis suggests that very few of the defect lines are common to the different growths.

U2 - 10.1051/jphyscol:19888403

DO - 10.1051/jphyscol:19888403

M3 - Article

VL - 49

SP - C8-889-C8-890

JO - Le Journal de Physique Colloques

JF - Le Journal de Physique Colloques

IS - C8

ER -