Multi-trigger resist for electron beam lithography

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Standard

Multi-trigger resist for electron beam lithography. / Kazazis, Dimitrios; Theis, Wolfgang; Robinson, Alex P.; Popescu, Carmen; Mcclelland, Alex; Dawson, Guy; Roth, John; Ekinci, Yasin; Behringer, Uwe F.w. (Editor); Finders, Jo (Editor).

Proceedings of the SPIE. Vol. 10446 Society of Photo-Optical Instrumentation Engineers, 2017. 1044608 (SPIE - International Society for Optical Engineering. Proceedings; Vol. 10446).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Harvard

Kazazis, D, Theis, W, Robinson, AP, Popescu, C, Mcclelland, A, Dawson, G, Roth, J, Ekinci, Y, Behringer, UFW (ed.) & Finders, J (ed.) 2017, Multi-trigger resist for electron beam lithography. in Proceedings of the SPIE. vol. 10446, 1044608, SPIE - International Society for Optical Engineering. Proceedings, vol. 10446, Society of Photo-Optical Instrumentation Engineers, 33rd European Mask and Lithography Conference, 26/06/17. https://doi.org/10.1117/12.2279767

APA

Kazazis, D., Theis, W., Robinson, A. P., Popescu, C., Mcclelland, A., Dawson, G., Roth, J., Ekinci, Y., Behringer, U. F. W. (Ed.), & Finders, J. (Ed.) (2017). Multi-trigger resist for electron beam lithography. In Proceedings of the SPIE (Vol. 10446). [1044608] (SPIE - International Society for Optical Engineering. Proceedings; Vol. 10446). Society of Photo-Optical Instrumentation Engineers. https://doi.org/10.1117/12.2279767

Vancouver

Kazazis D, Theis W, Robinson AP, Popescu C, Mcclelland A, Dawson G et al. Multi-trigger resist for electron beam lithography. In Proceedings of the SPIE. Vol. 10446. Society of Photo-Optical Instrumentation Engineers. 2017. 1044608. (SPIE - International Society for Optical Engineering. Proceedings). https://doi.org/10.1117/12.2279767

Author

Kazazis, Dimitrios ; Theis, Wolfgang ; Robinson, Alex P. ; Popescu, Carmen ; Mcclelland, Alex ; Dawson, Guy ; Roth, John ; Ekinci, Yasin ; Behringer, Uwe F.w. (Editor) ; Finders, Jo (Editor). / Multi-trigger resist for electron beam lithography. Proceedings of the SPIE. Vol. 10446 Society of Photo-Optical Instrumentation Engineers, 2017. (SPIE - International Society for Optical Engineering. Proceedings).

Bibtex

@inproceedings{4210a8c5d62c4cbf9e646800ff0f10b0,
title = "Multi-trigger resist for electron beam lithography",
abstract = "Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the Multi-trigger concept. In a Multi-Trigger resist, multiple distinct chemical reactions in chemical amplification process must take place in close proximity simultaneously during resist exposure. Thus, at the edge of a pattern feature, where the density of photo-initiators that drive the chemical reactions is low, the amplification process ceases. This significantly reduces blurring effects and enables much improved resolution and line edge roughness while maintaining the sensitivity advantages of chemical amplification. A series of studies such as enhanced resist crosslinking, elimination of the nucleophilic quencher and the addition of high-Z additives to e-beam resist (as a means to increase sensitivity and modify secondary electron blur) were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning down to 28 nm pitch lines with a dose of 248 μC/cm2 using 100kV e-beam lithography, demonstrating the potential of the concept. Furthermore, it was possible to pattern 26 nm diameter pillars on a 60 nm pitch with dose of 221μC/cm2 with a line edge roughness of 2.3 nm.",
author = "Dimitrios Kazazis and Wolfgang Theis and Robinson, {Alex P.} and Carmen Popescu and Alex Mcclelland and Guy Dawson and John Roth and Yasin Ekinci and Behringer, {Uwe F.w.} and Jo Finders",
year = "2017",
month = sep,
day = "28",
doi = "10.1117/12.2279767",
language = "English",
isbn = "9781510613560",
volume = "10446",
series = "SPIE - International Society for Optical Engineering. Proceedings",
publisher = "Society of Photo-Optical Instrumentation Engineers",
booktitle = "Proceedings of the SPIE",
address = "United States",
note = "33rd European Mask and Lithography Conference ; Conference date: 26-06-2017 Through 28-06-2017",

}

RIS

TY - GEN

T1 - Multi-trigger resist for electron beam lithography

AU - Kazazis, Dimitrios

AU - Theis, Wolfgang

AU - Robinson, Alex P.

AU - Popescu, Carmen

AU - Mcclelland, Alex

AU - Dawson, Guy

AU - Roth, John

AU - Ekinci, Yasin

A2 - Behringer, Uwe F.w.

A2 - Finders, Jo

PY - 2017/9/28

Y1 - 2017/9/28

N2 - Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the Multi-trigger concept. In a Multi-Trigger resist, multiple distinct chemical reactions in chemical amplification process must take place in close proximity simultaneously during resist exposure. Thus, at the edge of a pattern feature, where the density of photo-initiators that drive the chemical reactions is low, the amplification process ceases. This significantly reduces blurring effects and enables much improved resolution and line edge roughness while maintaining the sensitivity advantages of chemical amplification. A series of studies such as enhanced resist crosslinking, elimination of the nucleophilic quencher and the addition of high-Z additives to e-beam resist (as a means to increase sensitivity and modify secondary electron blur) were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning down to 28 nm pitch lines with a dose of 248 μC/cm2 using 100kV e-beam lithography, demonstrating the potential of the concept. Furthermore, it was possible to pattern 26 nm diameter pillars on a 60 nm pitch with dose of 221μC/cm2 with a line edge roughness of 2.3 nm.

AB - Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the Multi-trigger concept. In a Multi-Trigger resist, multiple distinct chemical reactions in chemical amplification process must take place in close proximity simultaneously during resist exposure. Thus, at the edge of a pattern feature, where the density of photo-initiators that drive the chemical reactions is low, the amplification process ceases. This significantly reduces blurring effects and enables much improved resolution and line edge roughness while maintaining the sensitivity advantages of chemical amplification. A series of studies such as enhanced resist crosslinking, elimination of the nucleophilic quencher and the addition of high-Z additives to e-beam resist (as a means to increase sensitivity and modify secondary electron blur) were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning down to 28 nm pitch lines with a dose of 248 μC/cm2 using 100kV e-beam lithography, demonstrating the potential of the concept. Furthermore, it was possible to pattern 26 nm diameter pillars on a 60 nm pitch with dose of 221μC/cm2 with a line edge roughness of 2.3 nm.

U2 - 10.1117/12.2279767

DO - 10.1117/12.2279767

M3 - Conference contribution

SN - 9781510613560

VL - 10446

T3 - SPIE - International Society for Optical Engineering. Proceedings

BT - Proceedings of the SPIE

PB - Society of Photo-Optical Instrumentation Engineers

T2 - 33rd European Mask and Lithography Conference

Y2 - 26 June 2017 through 28 June 2017

ER -