Multi-trigger resist for electron beam lithography

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Authors

  • Dimitrios Kazazis
  • Carmen Popescu
  • Alex Mcclelland
  • Guy Dawson
  • John Roth
  • Yasin Ekinci
  • Uwe F.w. Behringer (Editor)
  • Jo Finders (Editor)

Colleges, School and Institutes

Abstract

Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the Multi-trigger concept. In a Multi-Trigger resist, multiple distinct chemical reactions in chemical amplification process must take place in close proximity simultaneously during resist exposure. Thus, at the edge of a pattern feature, where the density of photo-initiators that drive the chemical reactions is low, the amplification process ceases. This significantly reduces blurring effects and enables much improved resolution and line edge roughness while maintaining the sensitivity advantages of chemical amplification. A series of studies such as enhanced resist crosslinking, elimination of the nucleophilic quencher and the addition of high-Z additives to e-beam resist (as a means to increase sensitivity and modify secondary electron blur) were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning down to 28 nm pitch lines with a dose of 248 μC/cm2 using 100kV e-beam lithography, demonstrating the potential of the concept. Furthermore, it was possible to pattern 26 nm diameter pillars on a 60 nm pitch with dose of 221μC/cm2 with a line edge roughness of 2.3 nm.

Details

Original languageEnglish
Title of host publicationProceedings of the SPIE
Publication statusPublished - 28 Sep 2017
Event33rd European Mask and Lithography Conference - Dresden, Germany
Duration: 26 Jun 201728 Jun 2017

Publication series

NameSPIE - International Society for Optical Engineering. Proceedings
PublisherSPIE
Volume10446
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference33rd European Mask and Lithography Conference
Period26/06/1728/06/17