Interaction effects between electromagnetic bandgap structures and split ring resonators in microstrip technology

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Authors

  • Francisco Falcone
  • Txema Lopetegi
  • M. A. Gómez-Laso
  • Miguel Beruete
  • Israel Arnedo
  • Eduardo Jarauta
  • J. A. Marcotegui
  • Mario Sorolla

Colleges, School and Institutes

External organisations

  • Universidad Pública de Navarra
  • Conatel

Abstract

In this paper interaction effects between Electromagnetic Bandgap (EBG) and an array of Split Ring resonators are analyzed in planar microstrip technology. Due to the equivalent negative e behavior of the EBG structure and the effective negative μ value when the SRR particles are operating in the vicinity of the quasi-static resonance frequency, a passband response is expected, as already seen in Left-Handed devices. Full wave simulations as well as measurement results from fabricated prototypes are presented, confirming initial predictions.

Details

Original languageEnglish
Title of host publicationProceedings of the Mediterranean Electrotechnical Conference - MELECON
Publication statusPublished - 2006
Event2006 IEEE Mediterranean Electrotechnical Conference, MELECON 2006 - Benalmadena, Malaga, Spain
Duration: 16 May 200619 May 2006

Conference

Conference2006 IEEE Mediterranean Electrotechnical Conference, MELECON 2006
CountrySpain
CityBenalmadena, Malaga
Period16/05/0619/05/06

Keywords

  • Electromagnetic bandgap left-handed materials, Split ring resonators

ASJC Scopus subject areas