Abstract
Electrons backscattered from a scanning tunnelling microscope operating in the field emission mode have been collected to produce images of a rough Si(1 1 1) surface. We have obtained a spatial resolution of about 40 nm in such images. Comparison between backscattered electron images and topographic images reveals that edge enhancement and shadowing are important contrast mechanisms.
Original language | English |
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Pages (from-to) | 1849-1852 |
Number of pages | 4 |
Journal | Journal of Physics D: Applied Physics |
Volume | 34 |
Publication status | Published - 1 Jan 2001 |