High-resolution EUV lithography using a multi-trigger resist

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Authors

  • C. Popescu
  • D. Kazazis
  • A. McClelland
  • G. Dawson
  • J. Roth
  • Y. Ekinci

Colleges, School and Institutes

External organisations

  • Paul Scherrer Institut
  • Irresistible Materials Ltd
  • Nano-C

Abstract

As minimum lithographic size continues to shrink, the development of techniques and resist materials capable of high resolution, high sensitivity and low line edge roughness (LER) have become increasingly important for next-generation lithography. In this study we present results where the behaviour of the resist is driven towards the multi-trigger regime by manipulating the resist formulation. We also present results obtained after enhancements of the base molecule to give high resolution, better LER, and a significant sensitivity enhancement of 40% over the standard material. Finally, we present the inclusion of non-metallic high-Z elements into the formulation to allow for a further reduction in LER at the same resolution and sensitivity as seen for the enhanced MTR molecule, indicating a direction for further improvements.

Details

Original languageEnglish
Title of host publicationExtreme Ultraviolet (EUV) Lithography IX
EditorsKenneth A. Goldberg
Publication statusPublished - 19 Mar 2018
EventExtreme Ultraviolet (EUV) Lithography IX 2018 - San Jose, United States
Duration: 26 Feb 20181 Mar 2018

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume10583
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceExtreme Ultraviolet (EUV) Lithography IX 2018
CountryUnited States
CitySan Jose
Period26/02/181/03/18