Helium ion beam lithography on fullerene molecular resists for sub-10 nm patterning

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Helium ion beam lithography on fullerene molecular resists for sub-10 nm patterning. / Shi, Xiaoqing; Prewett, Philip; Huq, Ejaz; Bagnall, Darren M.; Robinson, Alex P.G.; Boden, Stuart A.

In: Microelectronic Engineering, Vol. 155, 26.02.2016, p. 74-78.

Research output: Contribution to journalArticlepeer-review

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Shi, Xiaoqing ; Prewett, Philip ; Huq, Ejaz ; Bagnall, Darren M. ; Robinson, Alex P.G. ; Boden, Stuart A. / Helium ion beam lithography on fullerene molecular resists for sub-10 nm patterning. In: Microelectronic Engineering. 2016 ; Vol. 155. pp. 74-78.

Bibtex

@article{bfa8e1835fb64e00a83783244fa6dea1,
title = "Helium ion beam lithography on fullerene molecular resists for sub-10 nm patterning",
abstract = "Helium ion beam lithography (HIBL) is an emerging technique that uses a sub-nanometre focused beam of helium ions generated in the helium ion microscope to expose resist. It benefits from high resolution, high sensitivity and a low proximity effect. Here we present an investigation into HIBL on a novel, negative tone fullerene-derivative molecular resist. Analysis of large area exposures reveals a sensitivity of ~ 40 μC/cm2 with a 30 keV helium beam which is almost three orders of magnitude higher than the sensitivity of this resist to a 30 keV electron beam. Sparse line features with line widths of 7.3 nm are achieved on the ~ 10 nm thick resist. The fabrication of 8.5 half-pitched lines with good feature separation and 6 nm half-pitched lines with inferior but still resolvable separation are also shown in this study. Thus, sub-10 nm patterning with small proximity effect is demonstrated using HIBL using standard processing conditions, establishing its potential as an alternative to EBL for rapid prototyping of beyond CMOS devices.",
keywords = "Helium ion beam lithography, Helium ion Microscope, Fullerene, Molecular resist, Nanolithography, Next-generation lithography",
author = "Xiaoqing Shi and Philip Prewett and Ejaz Huq and Bagnall, {Darren M.} and Robinson, {Alex P.G.} and Boden, {Stuart A.}",
year = "2016",
month = feb,
day = "26",
doi = "10.1016/j.mee.2016.02.045",
language = "English",
volume = "155",
pages = "74--78",
journal = "Microelectron Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Helium ion beam lithography on fullerene molecular resists for sub-10 nm patterning

AU - Shi, Xiaoqing

AU - Prewett, Philip

AU - Huq, Ejaz

AU - Bagnall, Darren M.

AU - Robinson, Alex P.G.

AU - Boden, Stuart A.

PY - 2016/2/26

Y1 - 2016/2/26

N2 - Helium ion beam lithography (HIBL) is an emerging technique that uses a sub-nanometre focused beam of helium ions generated in the helium ion microscope to expose resist. It benefits from high resolution, high sensitivity and a low proximity effect. Here we present an investigation into HIBL on a novel, negative tone fullerene-derivative molecular resist. Analysis of large area exposures reveals a sensitivity of ~ 40 μC/cm2 with a 30 keV helium beam which is almost three orders of magnitude higher than the sensitivity of this resist to a 30 keV electron beam. Sparse line features with line widths of 7.3 nm are achieved on the ~ 10 nm thick resist. The fabrication of 8.5 half-pitched lines with good feature separation and 6 nm half-pitched lines with inferior but still resolvable separation are also shown in this study. Thus, sub-10 nm patterning with small proximity effect is demonstrated using HIBL using standard processing conditions, establishing its potential as an alternative to EBL for rapid prototyping of beyond CMOS devices.

AB - Helium ion beam lithography (HIBL) is an emerging technique that uses a sub-nanometre focused beam of helium ions generated in the helium ion microscope to expose resist. It benefits from high resolution, high sensitivity and a low proximity effect. Here we present an investigation into HIBL on a novel, negative tone fullerene-derivative molecular resist. Analysis of large area exposures reveals a sensitivity of ~ 40 μC/cm2 with a 30 keV helium beam which is almost three orders of magnitude higher than the sensitivity of this resist to a 30 keV electron beam. Sparse line features with line widths of 7.3 nm are achieved on the ~ 10 nm thick resist. The fabrication of 8.5 half-pitched lines with good feature separation and 6 nm half-pitched lines with inferior but still resolvable separation are also shown in this study. Thus, sub-10 nm patterning with small proximity effect is demonstrated using HIBL using standard processing conditions, establishing its potential as an alternative to EBL for rapid prototyping of beyond CMOS devices.

KW - Helium ion beam lithography

KW - Helium ion Microscope

KW - Fullerene

KW - Molecular resist

KW - Nanolithography

KW - Next-generation lithography

U2 - 10.1016/j.mee.2016.02.045

DO - 10.1016/j.mee.2016.02.045

M3 - Article

VL - 155

SP - 74

EP - 78

JO - Microelectron Engineering

JF - Microelectron Engineering

SN - 0167-9317

ER -