Fullerene Resist Materials for the 32 nm Node and Beyond

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Fullerene Resist Materials for the 32 nm Node and Beyond. / Gibbons, Francis; Robinson, Alexander; Palmer, Richard; Diegoli, Sara; Manickam, Mayandithevar; Preece, Jon.

In: Advanced Functional Materials, Vol. 18, No. 13, 09.07.2008, p. 1977-1982.

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@article{149c871e62ee4ef89a64dfd9f68aaa50,
title = "Fullerene Resist Materials for the 32 nm Node and Beyond",
abstract = "Current resist materials cannot simultaneously meet the sensitivity, resolution and line width roughness (LWR) requirements set out by the International Technology Roadmap for Semiconductors (ITRS) for the 32nm node and beyond. Here we present a fullerene-based, chemically amplified resist system, which demonstrates the potential to fulfill these requirements for next generation lithography. A chemically amplified fullerene resist was prepared, consisting of the derivative MF07-01, an epoxide crosslinker, and a photoacid generator, such as triarylsulfonium hexafluoroantimonate. The sensitivity of this resist was shown to be between 5 and 10 mu C cm(-2) at 20 keV for various combinations of post-application bake and post-exposure bake conditions. Using 30 keV electron beam exposure, sparse patterns with 15 nm resolution were demonstrated, whilst for dense patterns a half-pitch of 25 nm could be achieved. The LWR for the densely patterned features is similar to 4 nm. The etch durability of the fullerene CA system was shown to be comparable to that of SAL601, a common novolac-based commercial resist, at almost four times that of silicon.",
author = "Francis Gibbons and Alexander Robinson and Richard Palmer and Sara Diegoli and Mayandithevar Manickam and Jon Preece",
year = "2008",
month = jul,
day = "9",
doi = "10.1002/adfm.200701155",
language = "English",
volume = "18",
pages = "1977--1982",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley",
number = "13",

}

RIS

TY - JOUR

T1 - Fullerene Resist Materials for the 32 nm Node and Beyond

AU - Gibbons, Francis

AU - Robinson, Alexander

AU - Palmer, Richard

AU - Diegoli, Sara

AU - Manickam, Mayandithevar

AU - Preece, Jon

PY - 2008/7/9

Y1 - 2008/7/9

N2 - Current resist materials cannot simultaneously meet the sensitivity, resolution and line width roughness (LWR) requirements set out by the International Technology Roadmap for Semiconductors (ITRS) for the 32nm node and beyond. Here we present a fullerene-based, chemically amplified resist system, which demonstrates the potential to fulfill these requirements for next generation lithography. A chemically amplified fullerene resist was prepared, consisting of the derivative MF07-01, an epoxide crosslinker, and a photoacid generator, such as triarylsulfonium hexafluoroantimonate. The sensitivity of this resist was shown to be between 5 and 10 mu C cm(-2) at 20 keV for various combinations of post-application bake and post-exposure bake conditions. Using 30 keV electron beam exposure, sparse patterns with 15 nm resolution were demonstrated, whilst for dense patterns a half-pitch of 25 nm could be achieved. The LWR for the densely patterned features is similar to 4 nm. The etch durability of the fullerene CA system was shown to be comparable to that of SAL601, a common novolac-based commercial resist, at almost four times that of silicon.

AB - Current resist materials cannot simultaneously meet the sensitivity, resolution and line width roughness (LWR) requirements set out by the International Technology Roadmap for Semiconductors (ITRS) for the 32nm node and beyond. Here we present a fullerene-based, chemically amplified resist system, which demonstrates the potential to fulfill these requirements for next generation lithography. A chemically amplified fullerene resist was prepared, consisting of the derivative MF07-01, an epoxide crosslinker, and a photoacid generator, such as triarylsulfonium hexafluoroantimonate. The sensitivity of this resist was shown to be between 5 and 10 mu C cm(-2) at 20 keV for various combinations of post-application bake and post-exposure bake conditions. Using 30 keV electron beam exposure, sparse patterns with 15 nm resolution were demonstrated, whilst for dense patterns a half-pitch of 25 nm could be achieved. The LWR for the densely patterned features is similar to 4 nm. The etch durability of the fullerene CA system was shown to be comparable to that of SAL601, a common novolac-based commercial resist, at almost four times that of silicon.

U2 - 10.1002/adfm.200701155

DO - 10.1002/adfm.200701155

M3 - Article

VL - 18

SP - 1977

EP - 1982

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 13

ER -