Fabrication and Characterisation of Barium Strontium Titanate Thick Film Device Structures for Microwave Applications

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Fabrication and Characterisation of Barium Strontium Titanate Thick Film Device Structures for Microwave Applications. / Zhang, Dou; Hu, W; Meggs, Carl; Su, B; Price, T; Iddles, D; Lancaster, Michael; Button, Timothy.

In: Journal of the European Ceramic Society, Vol. 27, No. 2-3, 01.01.2007, p. 1047-1051.

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@article{ff4433eeb6c04b03a624768860a243cf,
title = "Fabrication and Characterisation of Barium Strontium Titanate Thick Film Device Structures for Microwave Applications",
abstract = "Tunable capacitor elements for microwave phase shifter applications have been fabricated by screen printing barium strontium fitanate (BST) films on alumina substrates. A Ba0.70Sr0.30TiO3 Composition was chosen for the initial devices as it has been shown to exhibit high tunability at room temperature. A vertical capacitor test structure involving a Pt lower electrode, BST film and Ag top electrode has been used throughout the work. The tunability and figure of merit (phase shift/dB of insertion loss) at 2-3 GHz were found to be strongly dependent on the sintering temperature of the BST layers, with properties improving as the sintering temperature was increased. However, for sintering temperatures > 1280 degrees C, the device properties could not be measured, possibly indicating a problem with the lower Pt electrodes. In order to reduce the sintering temperature required for densification, test structures have also been fabricated using other BST compositions to which sintering aids have been added. Finally, a reflection-type phase shifter (RTPS) based on the capacitor test structure and optimised processing conditions is presented with microwave measurements results. (c) 2006 Elsevier Ltd. All rights reserved.",
keywords = "sintering, capacitors, dielectric properties, (Ba, Sr)TiO3, films",
author = "Dou Zhang and W Hu and Carl Meggs and B Su and T Price and D Iddles and Michael Lancaster and Timothy Button",
year = "2007",
month = jan,
day = "1",
doi = "10.1016/j.jeurceramsoc.2006.05.051",
language = "English",
volume = "27",
pages = "1047--1051",
journal = "Journal of the European Ceramic Society",
issn = "0955-2219",
publisher = "Elsevier",
number = "2-3",

}

RIS

TY - JOUR

T1 - Fabrication and Characterisation of Barium Strontium Titanate Thick Film Device Structures for Microwave Applications

AU - Zhang, Dou

AU - Hu, W

AU - Meggs, Carl

AU - Su, B

AU - Price, T

AU - Iddles, D

AU - Lancaster, Michael

AU - Button, Timothy

PY - 2007/1/1

Y1 - 2007/1/1

N2 - Tunable capacitor elements for microwave phase shifter applications have been fabricated by screen printing barium strontium fitanate (BST) films on alumina substrates. A Ba0.70Sr0.30TiO3 Composition was chosen for the initial devices as it has been shown to exhibit high tunability at room temperature. A vertical capacitor test structure involving a Pt lower electrode, BST film and Ag top electrode has been used throughout the work. The tunability and figure of merit (phase shift/dB of insertion loss) at 2-3 GHz were found to be strongly dependent on the sintering temperature of the BST layers, with properties improving as the sintering temperature was increased. However, for sintering temperatures > 1280 degrees C, the device properties could not be measured, possibly indicating a problem with the lower Pt electrodes. In order to reduce the sintering temperature required for densification, test structures have also been fabricated using other BST compositions to which sintering aids have been added. Finally, a reflection-type phase shifter (RTPS) based on the capacitor test structure and optimised processing conditions is presented with microwave measurements results. (c) 2006 Elsevier Ltd. All rights reserved.

AB - Tunable capacitor elements for microwave phase shifter applications have been fabricated by screen printing barium strontium fitanate (BST) films on alumina substrates. A Ba0.70Sr0.30TiO3 Composition was chosen for the initial devices as it has been shown to exhibit high tunability at room temperature. A vertical capacitor test structure involving a Pt lower electrode, BST film and Ag top electrode has been used throughout the work. The tunability and figure of merit (phase shift/dB of insertion loss) at 2-3 GHz were found to be strongly dependent on the sintering temperature of the BST layers, with properties improving as the sintering temperature was increased. However, for sintering temperatures > 1280 degrees C, the device properties could not be measured, possibly indicating a problem with the lower Pt electrodes. In order to reduce the sintering temperature required for densification, test structures have also been fabricated using other BST compositions to which sintering aids have been added. Finally, a reflection-type phase shifter (RTPS) based on the capacitor test structure and optimised processing conditions is presented with microwave measurements results. (c) 2006 Elsevier Ltd. All rights reserved.

KW - sintering

KW - capacitors

KW - dielectric properties

KW - (Ba, Sr)TiO3

KW - films

U2 - 10.1016/j.jeurceramsoc.2006.05.051

DO - 10.1016/j.jeurceramsoc.2006.05.051

M3 - Article

VL - 27

SP - 1047

EP - 1051

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

SN - 0955-2219

IS - 2-3

ER -