Abstract
Dislocations in shock loaded tantalum single crystals were imaged using both TEM and ECCI in an SEM with a conventional backscattered electron detector. The results were compared with backscattered electron intensity profiles across dislocations calculated via the dynamic theory of electron diffraction. A one-to-one correspondence between ECCI and TEM is established. High voltage and low index reflections should be used to obtain the highest dislocation contrast and greatest imaging depth.
Original language | English |
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Pages (from-to) | 346-359 |
Journal | Philosophical Magazine |
Volume | 97 |
Issue number | 5 |
DOIs | |
Publication status | Published - 6 Dec 2016 |
Keywords
- Electron microscopy
- electron channelling
- dislocations
- tantalum
- Computer Simulation
- crystal defects
- defect analysis