Electron channelling contrast imaging of dislocations in a conventional SEM

Research output: Contribution to journalArticle

Authors

Colleges, School and Institutes

Abstract

Dislocations in shock loaded tantalum single crystals were imaged using both TEM and ECCI in an SEM with a conventional backscattered electron detector. The results were compared with backscattered electron intensity profiles across dislocations calculated via the dynamic theory of electron diffraction. A one-to-one correspondence between ECCI and TEM is established. High voltage and low index reflections should be used to obtain the highest dislocation contrast and greatest imaging depth.

Details

Original languageEnglish
Pages (from-to)346-359
JournalPhilosophical Magazine
Volume97
Issue number5
Early online date6 Dec 2016
Publication statusE-pub ahead of print - 6 Dec 2016

Keywords

  • Electron microscopy, electron channelling, dislocations, tantalum, Computer Simulation, crystal defects, defect analysis