Electron channelling contrast imaging of dislocations in a conventional SEM
Research output: Contribution to journal › Article
Colleges, School and Institutes
Dislocations in shock loaded tantalum single crystals were imaged using both TEM and ECCI in an SEM with a conventional backscattered electron detector. The results were compared with backscattered electron intensity profiles across dislocations calculated via the dynamic theory of electron diffraction. A one-to-one correspondence between ECCI and TEM is established. High voltage and low index reflections should be used to obtain the highest dislocation contrast and greatest imaging depth.
|Early online date||6 Dec 2016|
|Publication status||E-pub ahead of print - 6 Dec 2016|
- Electron microscopy, electron channelling, dislocations, tantalum, Computer Simulation, crystal defects, defect analysis