Electromagnetic functionalization of wide-bandgap dielectric oxides by boron interstitial doping
Research output: Contribution to journal › Article › peer-review
Authors
Colleges, School and Institutes
External organisations
- Institut für Physik; Martin-Luther-Universität Halle-Wittenberg; 06120 Halle Germany
- Department of Physics, University of Warwick, Coventry CV4 7AL
- Fritz-Haber-Institut der Max-Planck-Gesellschaft; 14195 Berlin Germany
- Max-Planck-Institut für Mikrostrukturphysik; 06120 Halle Germany
- School of Semiconductor and Chemical Engineering; Chonbuk National University; Jeonju 54596 Republic of Korea
- Science institute; University of Iceland; Reykjavik IS-104 Iceland
- Fraunhofer Center for Silicon Photovoltaics CSP; Halle 06120 Germany
- Institute of Nano Science and Technology; Hanyang University; Seoul 04763 Republic of Korea
- College of Science; Engineering & Health; RMIT University; Melbourne VIC 3000 Australia
Abstract
A surge in interest of oxide‐based materials is testimony for their potential utility in a wide array of device applications and offers a fascinating landscape for tuning the functional properties through a variety of physical and chemical parameters. In particular, selective electronic/defect doping has been demonstrated to be vital in tailoring novel functionalities, not existing in the bulk host oxides. Here, an extraordinary interstitial doping effect is demonstrated centered around a light element, boron (B). The host matrix is a novel composite system, made from discrete bulk LaAlO3:LaBO3 compounds. The findings show a spontaneous ordering of the interstitial B cations within the host LaAlO3 lattices, and subsequent spin‐polarized charge injection into the neighboring cations. This leads to a series of remarkable cation‐dominated electrical switching and high‐temperature ferromagnetism. Hence, the induced interstitial doping serves to transform a nonmagnetic insulating bulk oxide into a ferromagnetic ionic–electronic conductor. This unique interstitial B doping effect upon its control is proposed to be as a general route for extracting/modifying multifunctional properties in bulk oxides utilized in energy and spin‐based applications.
Details
Original language | English |
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Article number | 1802025 |
Number of pages | 9 |
Journal | Advanced Materials |
Volume | 30 |
Issue number | 39 |
Early online date | 21 Aug 2018 |
Publication status | Published - 26 Sep 2018 |
Keywords
- first-principle calculations, light element interstitial doping, oxide composites, resistive switching, Stoner ferromagnetism