Electromagnetic functionalization of wide-bandgap dielectric oxides by boron interstitial doping

Research output: Contribution to journalArticle

Authors

  • Dae-sung Park
  • Gregory J. Rees
  • Haiyuan Wang
  • Diana Rata
  • Igor V. Maznichenko
  • Sergey Ostanin
  • Akash Bhatnagar
  • Chel-jong Choi
  • Ragnar D. B. Jónsson
  • Kai Kaufmann
  • Reza Kashtiban
  • Marc Walker
  • Cheng-tien Chiang
  • Einar B. Thorsteinsson
  • Zhengdong Luo
  • In-sung Park
  • John V. Hanna
  • Ingrid Mertig
  • Kathrin Dörr
  • Hafliði P. Gíslason
  • Chris F. Mcconville

Colleges, School and Institutes

External organisations

  • Institut für Physik; Martin-Luther-Universität Halle-Wittenberg; 06120 Halle Germany
  • Department of Physics, University of Warwick, Coventry CV4 7AL
  • Fritz-Haber-Institut der Max-Planck-Gesellschaft; 14195 Berlin Germany
  • Max-Planck-Institut für Mikrostrukturphysik; 06120 Halle Germany
  • School of Semiconductor and Chemical Engineering; Chonbuk National University; Jeonju 54596 Republic of Korea
  • Science institute; University of Iceland; Reykjavik IS-104 Iceland
  • Fraunhofer Center for Silicon Photovoltaics CSP; Halle 06120 Germany
  • Institute of Nano Science and Technology; Hanyang University; Seoul 04763 Republic of Korea
  • College of Science; Engineering & Health; RMIT University; Melbourne VIC 3000 Australia

Abstract

A surge in interest of oxide‐based materials is testimony for their potential utility in a wide array of device applications and offers a fascinating landscape for tuning the functional properties through a variety of physical and chemical parameters. In particular, selective electronic/defect doping has been demonstrated to be vital in tailoring novel functionalities, not existing in the bulk host oxides. Here, an extraordinary interstitial doping effect is demonstrated centered around a light element, boron (B). The host matrix is a novel composite system, made from discrete bulk LaAlO3:LaBO3 compounds. The findings show a spontaneous ordering of the interstitial B cations within the host LaAlO3 lattices, and subsequent spin‐polarized charge injection into the neighboring cations. This leads to a series of remarkable cation‐dominated electrical switching and high‐temperature ferromagnetism. Hence, the induced interstitial doping serves to transform a nonmagnetic insulating bulk oxide into a ferromagnetic ionic–electronic conductor. This unique interstitial B doping effect upon its control is proposed to be as a general route for extracting/modifying multifunctional properties in bulk oxides utilized in energy and spin‐based applications.

Details

Original languageEnglish
Article number1802025
Number of pages9
JournalAdvanced Materials
Volume30
Issue number39
Early online date21 Aug 2018
Publication statusPublished - 26 Sep 2018

Keywords

  • first-principle calculations, light element interstitial doping, oxide composites, resistive switching, Stoner ferromagnetism