Electromagnetic functionalization of wide-bandgap dielectric oxides by boron interstitial doping

Research output: Contribution to journalArticlepeer-review


  • Dae-sung Park
  • Gregory J. Rees
  • Haiyuan Wang
  • Diana Rata
  • Igor V. Maznichenko
  • Sergey Ostanin
  • Akash Bhatnagar
  • Chel-jong Choi
  • Ragnar D. B. Jónsson
  • Kai Kaufmann
  • Reza Kashtiban
  • Marc Walker
  • Cheng-tien Chiang
  • Einar B. Thorsteinsson
  • Zhengdong Luo
  • In-sung Park
  • John V. Hanna
  • Ingrid Mertig
  • Kathrin Dörr
  • Hafliði P. Gíslason
  • Chris F. Mcconville

Colleges, School and Institutes

External organisations

  • Institut für Physik; Martin-Luther-Universität Halle-Wittenberg; 06120 Halle Germany
  • University of Warwick
  • Fritz-Haber-Institut der Max-Planck-Gesellschaft; 14195 Berlin Germany
  • Max-Planck-Institut für Mikrostrukturphysik; 06120 Halle Germany
  • School of Semiconductor and Chemical Engineering; Chonbuk National University; Jeonju 54596 Republic of Korea
  • Science institute; University of Iceland; Reykjavik IS-104 Iceland
  • Fraunhofer Center for Silicon Photovoltaics CSP; Halle 06120 Germany
  • Institute of Nano Science and Technology; Hanyang University; Seoul 04763 Republic of Korea
  • College of Science; Engineering & Health; RMIT University; Melbourne VIC 3000 Australia


A surge in interest of oxide‐based materials is testimony for their potential utility in a wide array of device applications and offers a fascinating landscape for tuning the functional properties through a variety of physical and chemical parameters. In particular, selective electronic/defect doping has been demonstrated to be vital in tailoring novel functionalities, not existing in the bulk host oxides. Here, an extraordinary interstitial doping effect is demonstrated centered around a light element, boron (B). The host matrix is a novel composite system, made from discrete bulk LaAlO3:LaBO3 compounds. The findings show a spontaneous ordering of the interstitial B cations within the host LaAlO3 lattices, and subsequent spin‐polarized charge injection into the neighboring cations. This leads to a series of remarkable cation‐dominated electrical switching and high‐temperature ferromagnetism. Hence, the induced interstitial doping serves to transform a nonmagnetic insulating bulk oxide into a ferromagnetic ionic–electronic conductor. This unique interstitial B doping effect upon its control is proposed to be as a general route for extracting/modifying multifunctional properties in bulk oxides utilized in energy and spin‐based applications.


Original languageEnglish
Article number1802025
Number of pages9
JournalAdvanced Materials
Issue number39
Early online date21 Aug 2018
Publication statusPublished - 26 Sep 2018


  • first-principle calculations, light element interstitial doping, oxide composites, resistive switching, Stoner ferromagnetism