TY - JOUR
T1 - Effect of growth defects on microwave properties in epitaxial Ba0.5Sr0.5TiO3 thin films grown on (001) MgO by pulsed laser deposition
AU - Tse, Y.Y.
AU - Jones, I.P.
AU - Suherman, P.M.
AU - Jackson, T.J.
PY - 2008/6/1
Y1 - 2008/6/1
N2 - BaSrTiO (BSTO) films have been grown heteroepitaxially on (001) MgO substrates by pulsed laser deposition (PLD) to fabricate microwave phase shifters for the wide frequency range 45 MHz-50 GHz. Both as-grown and ex situ annealed films have a cube on cube epitaxial relationship with 〈100〉BSTO//〈100〉MgO. Threading dislocations are the dominant defects, mostly with Burgers vectors b = 〈101〉. Growth at 10 mbar oxygen pressure, compared to 10 mbar, resulted in significantly better properties. Ex situ annealing of the film grown at 0.1 mbar resulted in a reduction of 40% in threading dislocation density and a 40% increase in dielectric tunability.
AB - BaSrTiO (BSTO) films have been grown heteroepitaxially on (001) MgO substrates by pulsed laser deposition (PLD) to fabricate microwave phase shifters for the wide frequency range 45 MHz-50 GHz. Both as-grown and ex situ annealed films have a cube on cube epitaxial relationship with 〈100〉BSTO//〈100〉MgO. Threading dislocations are the dominant defects, mostly with Burgers vectors b = 〈101〉. Growth at 10 mbar oxygen pressure, compared to 10 mbar, resulted in significantly better properties. Ex situ annealing of the film grown at 0.1 mbar resulted in a reduction of 40% in threading dislocation density and a 40% increase in dielectric tunability.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-52949149707&partnerID=8YFLogxK
U2 - 10.1080/14786430802375642
DO - 10.1080/14786430802375642
M3 - Article
AN - SCOPUS:52949149707
SN - 1478-6435
VL - 88
SP - 2505
EP - 2518
JO - Philosophical Magazine
JF - Philosophical Magazine
IS - 16
ER -