Dynamic absorption coefficients of chemically amplified resists and nonchemically amplified resists at extreme ultraviolet

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Dynamic absorption coefficients of chemically amplified resists and nonchemically amplified resists at extreme ultraviolet. / Fallica, Roberto; Stowers, Jason; Grenville, Andrew; Frommhold, Andreas; Robinson, Alexander; Ekinci, Yasin.

In: Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 15, No. 3, 033506, 08.08.2016.

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@article{cd9374b2466446df9ae89813c5c82d0c,
title = "Dynamic absorption coefficients of chemically amplified resists and nonchemically amplified resists at extreme ultraviolet",
abstract = "The dynamic absorption coefficients of several chemically amplified resists (CAR) and non-CAR extreme ultraviolet (EUV) photoresists are measured experimentally using a specifically developed setup in transmission mode at the x-ray interference lithography beamline of the Swiss Light Source. The absorption coefficient α and the Dill parameters ABC were measured with unprecedented accuracy. In general, the α of resists match very closely with the theoretical value calculated from elemental densities and absorption coefficients, whereas exceptions are observed. In addition, through the direct measurements of the absorption coefficients and dose-to-clear values, we introduce a new figure of merit called chemical sensitivity to account for all the postabsorption chemical reaction ongoing in the resist, which also predicts a quantitative clearing volume and clearing radius, due to the photon absorption in the resist. These parameters may help provide deeper insight into the underlying mechanisms of the EUV concepts of clearing volume and clearing radius, which are then defined and quantitatively calculated.",
keywords = "absorption coefficient, clearing radius, clearing volume, chemical sensitivity, Dill parameters",
author = "Roberto Fallica and Jason Stowers and Andrew Grenville and Andreas Frommhold and Alexander Robinson and Yasin Ekinci",
year = "2016",
month = aug,
day = "8",
doi = "10.1117/1.JMM.15.3.033506",
language = "English",
volume = "15",
journal = "Journal of Micro/Nanolithography, MEMS, and MOEMS",
issn = "1932-5150",
publisher = "Society of Photo-Optical Instrumentation Engineers",
number = "3",

}

RIS

TY - JOUR

T1 - Dynamic absorption coefficients of chemically amplified resists and nonchemically amplified resists at extreme ultraviolet

AU - Fallica, Roberto

AU - Stowers, Jason

AU - Grenville, Andrew

AU - Frommhold, Andreas

AU - Robinson, Alexander

AU - Ekinci, Yasin

PY - 2016/8/8

Y1 - 2016/8/8

N2 - The dynamic absorption coefficients of several chemically amplified resists (CAR) and non-CAR extreme ultraviolet (EUV) photoresists are measured experimentally using a specifically developed setup in transmission mode at the x-ray interference lithography beamline of the Swiss Light Source. The absorption coefficient α and the Dill parameters ABC were measured with unprecedented accuracy. In general, the α of resists match very closely with the theoretical value calculated from elemental densities and absorption coefficients, whereas exceptions are observed. In addition, through the direct measurements of the absorption coefficients and dose-to-clear values, we introduce a new figure of merit called chemical sensitivity to account for all the postabsorption chemical reaction ongoing in the resist, which also predicts a quantitative clearing volume and clearing radius, due to the photon absorption in the resist. These parameters may help provide deeper insight into the underlying mechanisms of the EUV concepts of clearing volume and clearing radius, which are then defined and quantitatively calculated.

AB - The dynamic absorption coefficients of several chemically amplified resists (CAR) and non-CAR extreme ultraviolet (EUV) photoresists are measured experimentally using a specifically developed setup in transmission mode at the x-ray interference lithography beamline of the Swiss Light Source. The absorption coefficient α and the Dill parameters ABC were measured with unprecedented accuracy. In general, the α of resists match very closely with the theoretical value calculated from elemental densities and absorption coefficients, whereas exceptions are observed. In addition, through the direct measurements of the absorption coefficients and dose-to-clear values, we introduce a new figure of merit called chemical sensitivity to account for all the postabsorption chemical reaction ongoing in the resist, which also predicts a quantitative clearing volume and clearing radius, due to the photon absorption in the resist. These parameters may help provide deeper insight into the underlying mechanisms of the EUV concepts of clearing volume and clearing radius, which are then defined and quantitatively calculated.

KW - absorption coefficient

KW - clearing radius

KW - clearing volume

KW - chemical sensitivity

KW - Dill parameters

U2 - 10.1117/1.JMM.15.3.033506

DO - 10.1117/1.JMM.15.3.033506

M3 - Article

VL - 15

JO - Journal of Micro/Nanolithography, MEMS, and MOEMS

JF - Journal of Micro/Nanolithography, MEMS, and MOEMS

SN - 1932-5150

IS - 3

M1 - 033506

ER -