Abstract
The DC bias dependence of the dielectric properties of BST thick films on YAlO3 substrates has been investigated for possible tunable microwave device applications. Rare earth aluminate (e.g. YAlO3) substrates were used to overcome the interfacial interactions between BST thick films and alumina substrates during high temperature sintering. The results show that the BST films exhibit good chemical compatibility with YAlO3 substrates at sintering temperatures up to 1,500 degrees C. Improved density and enhanced grain growth in the films have been obtained compared to BST films on alumina substrates sintered at lower temperatures (
Original language | English |
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Pages (from-to) | 847-851 |
Number of pages | 5 |
Journal | Journal of Materials Science |
Volume | 43 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1 Jan 2008 |